ILD207T Vishay, ILD207T Datasheet - Page 2

• Manufacturer Part Number: ILD207T
• Description: OPTOCOUPLER PHOTO DL 200% 8SOIC
• Manufacturer: Vishay

Specifications of ILD207T

• Mounting Type: Surface Mount
• Isolation Voltage: 4000 Vrms
• Number Of Channels: 2
• Input Type: DC
• Voltage - Isolation: 4000Vrms
• Current Transfer Ratio (min): 34% @ 1mA
• Current Transfer Ratio (max): 200% @ 10mA
• Voltage - Output: 70V
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 8-SOIC (3.9mm Width)
• Forward Current: 30 mA
• Maximum Input Diode Current: 30 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 2
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.55 V
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 2
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: SOIC
• No. Of Pins: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current - Dc Forward (if): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1310-2; ILD207TGITR; ILD207TGITR

ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Vishay Semiconductors
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
(1)
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
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2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Power dissipation per channel
COUPLER
Isolation test voltage
Total package dissipation ambient
(2 LEDs and 2 detectors, 2 channels)
Storage temperature
Operating temperature
Soldering time from 260 °C
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector emitter leakage current
Collector emitter capacitance
COUPLER
Collector emitter saturation voltage
Capacitance (input to output)
Resistance (input to output)
CURRENT TRANSFER RATIO (T
PARAMETER
DC current transfer ratio
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices.
evaluations. Typical values are for information only and are not part of the testing requirements.
(1)
For technical questions, contact:
I
F
Optocoupler, Phototransistor Output,
V
V
V
TEST CONDITION
= 10 mA, I
TEST CONDITION
CE
CE
CE
amb
Dual Channel, SOIC-8 Package
= 5 V, I
I
= 10 V, I
= 5 V, I
I
I
F
V
C
E
V
V
CE
= 10 mA
R
R
= 10 μA
= 10 μA
amb
= 25 °C, unless otherwise specified)
amb
= 6 V
= 0 V
= 0 V
C
F
F
= 2.5 mA
= 10 mA
F
= 25 °C, unless otherwise specified)
TEST CONDITION
= 1 mA
= 25 °C, unless otherwise specified)
= 0 A
t = 1 s
ILD205T
ILD206T
ILD207T
ILD211T
ILD213T
ILD205T
ILD206T
ILD207T
ILD217T
PART
PART
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SYMBOL
SYMBOL
BV
BV
V
CTR
CTR
CTR
CTR
CTR
CTR
CTR
SYMBOL
CTR
CTR
I
C
C
R
CEO
CEsat
C
V
I
BV
BV
CEO
ECO
CE
R
IO
IO
F
O
P
T
V
P
T
T
amb
diss
ISO
stg
sld
DC
DC
DC
DC
DC
DC
DC
DC
DC
CEO
ECO
tot
MIN.
70
MIN.
7
100
100
100
40
63
20
13
22
34
- 55 to + 150
- 55 to + 100
VALUE
4000
TYP.
125
100
1.2
0.1
0.5
70
350
10
25
10
7
5
TYP.
120
30
45
70
Document Number: 83647
MAX.
1.55
100
0.4
50
MAX.
125
200
80
Rev. 1.8, 04-Mar-11
UNIT
V
mW
mW
RMS
°C
°C
V
V
s
UNIT
G
μA
pF
nA
pF
pF
V
V
V
V
UNIT
%
%
%
%
%
%
%
%
%