MT16HTF12864HY-667B3 Micron Technology Inc, MT16HTF12864HY-667B3 Datasheet - Page 13

• Manufacturer Part Number: MT16HTF12864HY-667B3
• Description: MODULE DDR2 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTF12864HY-667B3

• Memory Type: DDR2 SDRAM
• Memory Size: 1GB
• Speed: 667MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 128Mx64
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 45ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.496A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 10: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
DD
Specifications and Conditions – 2GB (Continued)
),
t
RRD =
t
RRD (I
DD
), AL =
DD
),
t
t
RCD (I
RCD =
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
DD
t
RCD (I
) - 1 ×
DD
13
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
2736
-800
2296
-667
© 2004 Micron Technology, Inc. All rights reserved.
I
DD
2216
-53E
Specifications
-40E
2136
Units
mA