CQY37N Vishay, CQY37N Datasheet
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CQY37N
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CQY37N Summary of contents
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... Infrared Emitting Diode, 950 nm, GaAs DESCRIPTION CQY37N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package with lens. PRODUCT SUMMARY COMPONENT I (mW/sr) e CQY37N Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE CQY37N Note • ...
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... CQY37N Vishay Semiconductors 180 160 140 120 100 R = 450 K/W 80 thJA 100 T - Ambient Temperature (°C) 21319 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T PARAMETER Forward voltage Temperature coefficient Breakdown voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of ...
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... For technical questions, contact: Rev. 1.7, 08-Mar-11 Infrared Emitting Diode, 950 nm, GaAs 7994 Fig Relative Radiant Power vs. Wavelength 1000 94 7922 Fig Relative Radiant Intensity vs. Angular Displacement 140 100 emittertechsupport@vishay.com CQY37N Vishay Semiconductors 1.25 1.0 0.75 0.5 0. 100 1000 900 950 λ - Wavelength (nm) 0° ...
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... CQY37N Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Drawing-No.: 6.544-5052.01-4 Issue: 1; 12.10.95 95 11262 www.vishay.com For technical questions, contact: 4 Infrared Emitting Diode, 950 nm, GaAs emittertechsupport@vishay.com Document Number: 81002 Rev. 1.7, 08-Mar-11 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...