EVAL6730 STMicroelectronics, EVAL6730 Datasheet - Page 10

• Manufacturer Part Number: EVAL6730
• Description: EVAL BOARD FOR L6730XX
• Manufacturer: STMicroelectronics
• Type: Motor / Motion Controllers & Driversr

Specifications of EVAL6730

• Main Purpose: DC/DC, Step Down
• Outputs And Type: 1, Non-Isolated
• Power - Output: 66W
• Voltage - Output: 3.3V
• Current - Output: 20A
• Voltage - Input: 4.5 ~ 14V
• Regulator Topology: Buck
• Frequency - Switching: 400kHz
• Board Type: Fully Populated
• Utilized Ic / Part: L6730
• Input Voltage: 8 V to 52 V
• Product: Power Management Modules
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: L6208
• Other names: 497-5501

AN1451 APPLICATION NOTE
2.7 Sharing the Charge Pump Circuitry
If more than one device is used in the application, it's possible to use the charge pump from one L6208 to supply
the V
Figure 8. A 100nF capacitor (C8) should be connected to the V
Supply voltage pins (V
The higher the number of devices sharing the same charge pump, the lower will be the differential voltage avail-
able for gate drive (V
In this case it's recommended to omit the resistor on the CP pin, obtaining a higher current capability of the
charge pump circuitry.
Better performance can also be obtained using a 33nF capacitor for C5 and using schottky diodes (for example
BAT47 are recommended).
Sharing the same charge pump circuitry for more than 3÷4 devices is not recommended, since it will reduce the
V
Figure 8. Sharing the charge pump circuitry.
10/43
BOOT
BOOT
voltage increasing the high-side MOS on-resistance and thus power dissipation.
To other Devices
pins of several ICs. The unused CP pins on the slaved devices are left unconnected, as shown in
BOOT
To High-Side
Gate Drivers
S
) of the devices sharing the charge pump must be connected together.
V
BOOT
- V
S
), causing a higher R
CP
V
SA
L6208
V
SB
C18 = 100 nF
DS(ON)
for the high side DMOS, so higher dissipating power.
V
BOOT
BOOT
To High-Side
Gate Drivers
D1 = BAT47
C5 = 33nF
pin of each device.
CP
D2 = BAT47
V
SA
L6208
V
SB
C8 = 100nF