2SB0792 Panasonic Industrial Company/Electronic Components, 2SB0792 Datasheet
2SB0792
Manufacturer Part Number
2SB0792
Description
VCEO(V) = -150 ;; IC(A) = -0.05 ;; HFE(min) = 130 ;; HFE(max) = 450 ;; Package = Mini3-G1
Manufacturer
Panasonic Industrial Company/Electronic Components
Datasheet
1.2SB0792.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB0792AOLSO
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors
2SB0792
Silicon PNP epitaxial planar type
For high breakdown voltage low-noise amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
• High collector-emitter voltage (Base open) V
• Low noise voltage NV
• Mini type package, allowing downsizing of the equipment and
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB0792
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer
ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
automatic insertion through the tape packing and the magazine
packing
2. * : Rank classification
*
Marking
symbol
Parameter
Parameter
Rank
h
FE
2SB0792
2SB0792A
2SB0792
2SB0792A
2SB0792A
2SB0792
2SB0792A
2SB0792
2SB0792A
(2SB792)
130 to 220
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
2FR
I
P
I
T
V
V
CBO
CEO
EBO
IR
a
CP
I
R
C
stg
CE(sat)
C
NV
C
h
CBO
j
f
CEO
EBO
= 25°C
FE
T
ob
−55 to +150
CEO
Rating
I
I
V
V
I
V
V
V
R
C
E
C
−150
−185
−150
−185
−100
−50
200
150
CB
g
Note) The part numbers in the parenthesis show conventional part number.
CB
CE
CB
CE
−5
= −10 µA, I
, 2SB0792A
= −100 µA, I
= −30 mA, I
185 to 330
= 100 kΩ, Function = FLAT
SJC00058BED
= −5 V, I
= −10 V, I
= −10 V, I
= −100 V, I
= −10 V, I
2FS
IS
S
Conditions
Unit
mW
C
mA
mA
°C
°C
C
V
V
V
E
B
C
E
= −10 mA
B
= 0
E
= 10 mA, f = 200 MHz
= −3 mA
= 0, f = 1 MHz
= −1 mA, G
= 0
= 0
260 to 450
IT
T
V
Marking Symbol:
= 80 dB
10˚
(0.95) (0.95)
1
• 2SB0792: I
• 2SB0792A: 2F
2.90
1.9
±0.1
+0.20
–0.05
−150
−185
Min
130
130
(2SB792A)
0.40
−5
3
2
+0.10
–0.05
Typ
200
150
4
Mini3-G1 Package
Max
450
330
−1
−1
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
+0.10
–0.06
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1
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2SB0792 Summary of contents
Page 1
... SJC00058BED (2SB792A) Unit: mm +0.10 0.40 –0.05 +0.10 0.16 –0. (0.95) (0.95) 1.9 ±0.1 +0.20 2.90 –0.05 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: • 2SB0792: I • 2SB0792A: 2F Min Typ Max −150 −185 −5 −1 130 450 130 330 −1 200 150 V Unit V V µA V MHz ...
Page 2
... 240 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C −100 = −10 −1 = 75° 25°C −25°C − 0.1 − 0.01 − 0.1 −1 −10 −100 ( mA ) Collector current I C V ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...