BCW66 STMicroelectronics, BCW66 Datasheet
BCW66
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BCW66 Summary of contents
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... Base Current B P Total Dissipation Storage Temperature stg T Max. O perating Junction Temperature j October 1997 SMALL SIGNAL NPN TRANSISTORS INTERNAL SCHEMATIC DIAGRAM = BCW66 SOT-23 Value Uni 0 0.1 A 360 mW o -65 to 150 C o ...
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... BCW66 THERMAL DATA R Thermal Resistance Junction-Ambient t hj-amb R Thermal Resistance Junction-Substrate th j-SR Mounted on a ceramic substrate area = 0 2.5 cm ELECTRICAL CHARACTERISTICS (T Symb ol Parameter I Collector Cut-off CES Current ( Collector Cut-off EBO Current ( Collector-Emitter ( BR)CEO Breakdown Voltage ( Collector-Emitter (BR)CES Breakdown Voltage ...
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... SOT-23 MECHANICAL DATA mm DIM. MIN. TYP. A 0.85 B 0.65 C 1.20 D 2.80 E 0.95 F 1.9 G 2.1 H 0. 0.3 O 0.09 mils MAX. MIN. TYP. 1.1 33.4 0.95 25.6 1.4 47.2 3 110.2 1.05 37.4 2.05 74.8 2.5 82.6 0.48 14.9 0.6 11.8 0.1 0 0.65 11.8 0.17 3.5 BCW66 MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 0044616/B 3/4 ...
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... BCW66 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...