CP210 CENTRAL [Central Semiconductor Corp], CP210 Datasheet
CP210
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CP210 Summary of contents
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PROCESS Small Signal Transistors N - Channel Silicon Amplifer J FET Chip PROCESS DETAILS Process Die Size Die Thickness Drain Bonding Pad Area Source Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY BACKSIDE GATE ...
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... Typical Electrical Characteristics 25° 4.5 TYP -5.0V GS(OFF) 4 -0.5V 3.5 -1. 2.5 -1.5V -0.5V 2 -2.0V 1.5 -2.5V 1 -3.0V 0.5 -3.5V -4. 0.2 0 Drain-Source Voltage (V) 1 25°C A TYP -1.2V 1 GS(OFF 0.8 -0.1V 0.6 -0.2V 0.4 -0.3V -0.4V 0.2 -0.5V -0. 0.4 0 Drain-Source Voltage ( 15V 1kHz V = -5.0V GS(OFF CP210 -1.0V -1.5V -2.0V -2.5V -3.0V -3.5V -4.0V 0.6 0 -0.1V -0.2V -0.3V -0.4V -0.5V -0.6V 1.2 1 -September 2003) ...
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... Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS Typical Electrical Characteristics 900 V = 100mV 800 700 600 V GS(OFF) 500 400 300 200 100 0 - Ambient Temperature (°C) 2.4 3.2 4 CP210 = -1.2V -2.3V -5.0V 50 100 150 R3 (9 -September 2003) ...