CY62137V Cypress Semiconductor, CY62137V Datasheet

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CY62137V

Manufacturer Part Number
CY62137V
Description
2-Mbit (128K x 16) Static RAM
Manufacturer
Cypress Semiconductor
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05051 Rev. *B
Features
Functional Description
The CY62137V is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life
portable applications such as cellular telephones. The device
Note:
1.
• Temperature Ranges
• High Speed: 55 ns and 70 ns
• Wide voltage range: 2.7V–3.6V
• Ultra-low active, standby power
• Easy memory expansion with CE and OE features
• TTL-compatible inputs and outputs
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Package Available in a standard 44-pin TSOP Type II
Logic Block Diagram
(forward pinout) package
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
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10
6
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9
8
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®
3901 North First Street
Power-down
Circuit
(MoBL
COLUMN DECODER
DATA IN DRIVERS
RAM Array
2048 x 1024
128K x 16
®
) in
2-Mbit (128K x 16) Static RAM
also has an automatic power-down feature that reduces power
consumption by 99% when addresses are not toggling. The
device can also be put into standby mode when deselected
(CE HIGH) or when CE is LOW and both BLE and BHE are
HIGH. The input/output pins (I/O
a high-impedance state when: deselected (CE HIGH), outputs
are disabled (OE HIGH), BHE and BLE are disabled (BHE,
BLE HIGH), or during a write operation (CE LOW, and WE
LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
16
San Jose
). If Byte High Enable (BHE) is LOW, then data
CE
BHE
BLE
8
through I/O
0
to I/O
I/O
I/O
CA 95134
7
0
8
. If Byte High Enable (BHE) is
15
CY62137V MoBL
– I/O
– I/O
0
0
) is written into the location
BHE
WE
CE
OE
BLE
through I/O
through A
7
15
Revised June 21, 2004
0
16
15
through I/O
).
408-943-2600
) are placed in
8
to I/O
15
. See
7
), is
0

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CY62137V Summary of contents

Page 1

... Package Available in a standard 44-pin TSOP Type II (forward pinout) package Functional Description [1] The CY62137V is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life portable applications such as cellular telephones ...

Page 2

... OE. Output Enable. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins Vss. Ground for the device Vcc. Power supply for the device CY62137V MoBL Power Dissipation Operating, I Standby ...

Page 3

... > V – 0.3V 3. Automotive < 0.3V Description Test Conditions T = 25° MHz CC(typ) Test Conditions CY62137V MoBL Ambient Temperature –40°C to +85°C 2.7V to 3.6V –40°C to +125°C 2.7V to 3.6V CY62137V-55 CY62137V-70 [3] [3] Min. Typ. Max. Min. Typ. 2.4 2.4 0.4 2 2.2 CC 0.5V – ...

Page 4

... Operating Range) Conditions V = 1.0V, CE > V – 0.3V, V > < 0.3V; No input may exceed DATA RETENTION MODE V (min > 1 CDR CY62137V MoBL ALL INPUT PULSES Typ 90% 90% 10% GND Rise Time: 1 V/ns (c) V Unit Ohms Ohms Ohms Volts [3] Min. Typ. 1.0 – 0.3V LL 0.5 +0 ...

Page 5

... HZCE LZCE HZOE = ( Test Loads. Transition is measured ±500 mV from steady-state voltage. L HZWE CY62137V MoBL Max. Min. Max ...

Page 6

... WE is HIGH for read cycle. 14. Address valid prior to or coincident with CE transition LOW. Document #: 38-05051 Rev OHA ACE t DOE t LZOE t DBE 50 CY62137V MoBL DATA VALID HZCE t HZOE t HZBE DATA VALID 50%  HIGH IMPEDANCE Page ...

Page 7

... During this period, the I/Os are in output state and input signals should not be applied. Document #: 38-05051 Rev. *B [10, 15, 16 PWE DATA IN [10, 15, 16 SCE PWE t DATA CY62137V MoBL VALID VALID IN  Page ...

Page 8

... Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 17 Document #: 38-05051 Rev. *B [11, 16 DATA t HZWE [17 DATA t HZWE CY62137V MoBL VALID IN t LZWE VALID IN t LZWE  Page ...

Page 9

... Write Data In (I/O –I/O ); Write O 7 I/O –I/O in High Data In (I/O –I/O ); Write 8 15 I/O –I/O in High CY62137V MoBL Standby Current vs. Supply Voltage 35 MoBL 2.7 1.0 3.7 2.8 1.9 SUPPLY VOLTAGE (V) Mode Power Standby (I Standby (I Active (I Active (I Active (I Active (I Active (I Active (I Active (I Active (I Active (I  ...

Page 10

... Cypress against all charges. Package Name Package Type Z44 44-pin TSOP II 44-Pin TSOP II Z44 PIN 1 I. BASE PLANE 0°-5° 0.10 (.004) SEATING PLANE CY62137V MoBL Operating Range Industrial Automotive DIMENSION IN MM (INCH) MAX MIN ...

Page 11

... Document Title: CY62137V MoBL Document Number: 38-05051 Orig. of REV. ECN NO. Issue Date Change ** 109960 10/03/01 *A 116788 09/04/02 *B 237428 See ECN Document #: 38-05051 Rev. *B ® 2M (128K x 16) Static RAM SZV Changed from Spec number: 38-00738 to 38-05051 GBI Added footnote number one. Added SL power bin. ...

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