IDT71P71804 Integrated Device Technology, IDT71P71804 Datasheet

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IDT71P71804

Manufacturer Part Number
IDT71P71804
Description
1.8v 1m X 18 Ddr Ii Pipelined Sram
Manufacturer
Integrated Device Technology
Datasheet

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IDT71P71804S167BQ
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IDT, Integrated Device Technology Inc
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IDT71P71804S167BQ8
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IDT71P71804S167BQG
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Part Number:
IDT71P71804S200BQ
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IDT, Integrated Device Technology Inc
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IDT71P71804S200BQ8
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IDT, Integrated Device Technology Inc
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©2006 Integrated Device Technology, Inc. QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and Micron Technology, Inc.
Notes
1) Represents 18 signal lines for x18, and 36 signal lines for x36
2) Represents 20 address signal lines for x18 and 19 address signal lines for x36.
3) Represents 2 signal lines for x18 and 4 signal lines for x36.
4) Represents 36 signal lines for x18 and 72 signal lines for x36.
Features
Functional Block Diagram
18Mb Density (1Mx18, 512kx36)
Common Read and Write Data Port
Dual Echo Clock Output
2-Word Burst on all SRAM accesses
Multiplexed Address Bus
DDR (Double Data Rate) Data Bus
Depth expansion through Control Logic
HSTL (1.5V) inputs that can be scaled to receive signals from
1.4V to 1.9V.
Scalable output drivers
1.8V Core Voltage (V
165-ball, 1.0mm pitch, 13mm x 15mm fBGA Package
JTAG Interface
-
-
-
-
BW x
SA
S
R/ W
LD
K
K
C
C
A
Two word bursts data per clock
0
One Read or One Write request per clock cycle
Can drive HSTL, 1.8V TTL or any voltage level
from 1.4V to 1.9V.
Output Impedance adjustable from 35 ohms to 70
ohms
(Note3)
(Note2)
DD
LOGIC
)
CTRL
DATA
GEN
REG
REG
ADD
CLK
(Note2)
SELECT OUTPUT CONTROL
WRITE DRIVER
MEMORY
18Mb Pipelined
DDR™II SRAM
Burst of 2
ARRAY
18M
(Note 1)
1
Description
nous memories with a double-data-rate (DDR), bidirectional data port.
This scheme allows maximization of the bandwidth on the data bus by
passing two data items per clock cycle. The address bus operates at
single data rate speeds, allowing the user to fan out addresses and
ease system design while maintaining maximum performance on data
transfers.
and echo clocks, allowing the user to tune the bus for low noise and high
performance.
beyond SRAM devices that use any form of TTL interface. The inter-
face can be scaled to higher voltages (up to 1.9V) to interface with 1.8V
systems if necessary. The device has a V
allowing the user to designate the interface operational voltage, inde-
pendent of the device core voltage of 1.8V V
control allows the user to adjust the drive strength to adapt to a wide
range of loads and transmission lines.
Clocking
clocks and the C, C clocks. In addition, the DDRII has an output “echo”
clock, CQ, CQ.
(Note1)
The DDRII SRAM has two sets of input clocks, namely the K, K
The IDT DDRII
The DDRII has scalable output impedance on its data output bus
All interfaces of the DDRII SRAM are HSTL, allowing speeds
(Note4)
6112 drw 16
TM
Burst of two SRAMs are high-speed synchro-
(Note1)
CQ
DQ
CQ
IDT71P71804
IDT71P71604
DD.
DDQ
The output impedance
and a separate Vref,
APRIL 2006
DSC-6112/0A

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IDT71P71804 Summary of contents

Page 1

... C, C clocks. In addition, the DDRII has an output “echo” clock, CQ, CQ. (Note 1) WRITE DRIVER (Note2) (Note1) 18M MEMORY ARRAY SELECT OUTPUT CONTROL 1 IDT71P71804 IDT71P71604 Burst of two SRAMs are high-speed synchro- TM and a separate Vref, DDQ The output impedance DD. (Note4) (Note1) DQ ...

Page 2

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 The K and K clocks are the primary device input clocks. The K clock is used to clock in the control signals (LD, R/W and B Wx), the address, and the first word of the data burst during a write operation. The K clock is used to clock in the control signals (B Wx), and the second word of the data burst during a write operation ...

Page 3

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Pin Definitions Symbol Pin Function Data I/O signals. Data inputs are sampled on the rising edge of K and K during valid write operations. Data outputs are driven during a valid read operation. The outputs are aligned with the rising edge of both C and C during normal operation. When operating in a single clock mode (C and C tied high), the outputs are aligned with the rising edge of both K and K ...

Page 4

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Pin Definitions continued Symbol Pin Function DLL Turn Off. When low this input will turn off the DLL inside the device. The AC timings with the DLL turned off will be different from those listed in this data sheet. There will be an increased propagation delay from the incidence of ...

Page 5

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Pin Configuration IDT71P71804 ( REF Dof ...

Page 6

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Pin Configuration IDT71P71604 (512K REF Dof ...

Page 7

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Write Descriptions (1,2,3) Signal 0 BW Write Byte 0 L Write Byte 1 X Write Byte 2 X Write Byte 3 X NOTES: 1) All byte write (B Wx) signals are sampled on the rising edge of K and again on K ...

Page 8

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Application Example R Data Bus Address LD R MEMORY CONTROLLER Return CLK V t Source CLK Return Source R=50 SRAM #1 W R=250 REF 6 ...

Page 9

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Absolute Maximum Ratings Symbol Rating Supply Voltage on V with DD V TERM Respect to GND Supply Voltage on V with DDQ V TERM Respect to GND Voltage on Input terminals with V TERM respect to GND Voltage on Output and I/O ...

Page 10

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Parameter Symbol Input Leakage Current I IL Output Leakage Current I OL Operating Current I DD (x36): DDR Operating Current I DD (x18): DDR ...

Page 11

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Input Electrical Characteristics Over the Operating Temperature and Supply Voltage Range PARAMETER SYMBOL Input High Voltage (DC Input Low Voltage (DC) Input High Voltage (AC) Input Low Voltage, AC ...

Page 12

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst Test Conditions (1) Parameter Symbol Core Power Supply Voltage V DD I/O Power Supply Voltage V DDQ Input High Level V IH Input Low Level V IL Input Reference Level VREF Input Rise/Fall Time TR/TF DQ Rise/Fall Time ...

Page 13

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst Electrical Characteristics Symbol Parameter Clock Parameters t Clock Cycle Time (K,K,C,C) KHKH t Clock Phase Jitter (K,K,C,C) KC var t Clock High Time (K,K,C,C) KHKL t Clock LOW Time (K,K,C,C) KLKH t Clock (K→K,C→C) KHKH t Cl ock to clock (K→K,C→C) ...

Page 14

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Timing Waveform of Combined Read and Write Cycles NOP Read A0 Read A1 (burst of 2) (burst tKHKL tKLKH tKHKH tKHKH K LD tIVKH tKHIX R tAVKH tKHAX DQ Qx1 tKHCH tKHCH tCHQV ...

Page 15

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG This part contains an IEEE standard 1149.1 Compatible Test Access Port (TAP). The package pads are monitored by the Serial Scan circuitry when in test mode. This is to support connectivity testing during manufacturing and system diagnostics ...

Page 16

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Scan Register Definition Part Instrustion Register 512K x36 3 bits 1Mx18 3 bits Identification Register Definitions INSTRUCTION FIELD ALL DEVICES Revision Number (31:29) Device ID (28:12) IDT JEDEC ID CODE (11:1) ID Register Presence Indicator (0) Bypass Register 1 bit ...

Page 17

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Boundary Scan Exit Order (1M x 18-Bit) ORDER PIN 11P 11 10P 12 10N 10M 15 11N 11L 19 11M 10L ...

Page 18

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Boundary Scan Exit Order (512K x 36-Bit) ORDER PIN 11P 10N 13 10P 14 11M 11N 18 11L 19 10L 10M ...

Page 19

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 JTAG DC Operating Conditions Parameter Symbol I/O Power Supply V DDQ Power Supply Voltage V DD Input High Level V IH Input Low Level V IL TCK Input Leakage Current I IL TMS, TDI Input Leakage Current ...

Page 20

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 JTAG AC Characteristics Parameter Symbol TCK Cycle Time t CHCH TCK High Pulse Width t CHCL TCK Low Pulse Width t CLCH TMS Input Setup Time t MVCH TMS Input Hold Time t CHMX TDI Input Setup Time ...

Page 21

... IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Package Diagram Outline for 165-Ball Fine Pitch Grid Array Commercial Temperature Range 6.42 21 ...

Page 22

... SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and Micron Technology, Inc. “ BQ Package BQ 165 Fine Pitch Ball Grid Array (fBGA) 250 200 Clock Frequency in MegaHertz 167 IDT71P71804 DDR II SRAM Burst of 2 IDT71P71604 512K x 36 DDR II SRAM Burst of 2 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com 6.42 22 ...

Page 23

... IDT71P71804 ( -Bit) 71P71604 (512K x 36-Bit DDR II SRAM Burst of 2 Revision History REVISION DATE 0 07/29/05 A 04/21/06 PAGES DESCRIPTION 1-24 Released Final datasheet 1-3,7,8,10,13, Removed 2Mx8 (71P71204) and 2Mx9 (71P71104) device options. 16,17,22 9,12,19 Clarified VDDQ maximum value equals VDD. 10 Updated IDD operating current for x36 and x18 options. ...

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