IDT71P73804 Integrated Device Technology, IDT71P73804 Datasheet

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IDT71P73804

Manufacturer Part Number
IDT71P73804
Description
1.8v 1m X 18 Ddr Ii Pipelined Sram
Manufacturer
Integrated Device Technology
Datasheet

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IDT71P73804S167BQ
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IDT, Integrated Device Technology Inc
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10 000
Part Number:
IDT71P73804S167BQ8
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IDT71P73804S200BQ
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IDT, Integrated Device Technology Inc
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Part Number:
IDT71P73804S200BQ8
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IDT, Integrated Device Technology Inc
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Part Number:
IDT71P73804S250BQ
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IDT, Integrated Device Technology Inc
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10 000
©2005 Integrated Device Technology, Inc. “QDR SRAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress Semiconductor, IDT, and Micron Technology, Inc.“
Features
Functional Block Diagram
Notes
1) Represents 8 data signal lines for x8, 9 signal lines for x9, 18 signal lines for x18, and 36 signal lines for x36
2) Represents 19 address signal lines for x8 and x9, 20 address signal lines for x18, and 19 address signal lines for x36.
3) Represents 1 signal line for x9, 2 signal lines for x18, and four signal lines for x36. On x8 parts, the BW is a “nibble write” and there are 2
4) Represents 16 data signal lines for x8, 18 signal lines for x9, 36 signal lines for x18, and 72 signal lines for x36.
signal lines.
18Mb Density (2Mx8, 2Mx9, 1Mx18, 512Kx36)
Common Read and Write Data Port
Dual Echo Clock Output
4-Word Burst on all SRAM accesses
Multiplexed Address Bus
DDR (Double Data Rate) Data Bus
Depth expansion through Control Logic
HSTL (1.5V) inputs that can be scaled to receive signals
from 1.4V to 1.9V.
Scalable output drivers
1.8V Core Voltage (V
165-ball, 1.0mm pitch, 13mm x 15mm fBGA Package
JTAG Interface
-
-
-
-
Four word bursts data per two clock cycles
One Read or One Write request per two clock
cycles.
Can drive HSTL, 1.8V TTL or any voltage level
from 1.4V to 1.9V.
Output Impedance adjustable from 35 ohms to 70
ohms
DATA
REG
BWx
SA
SA
SA
RW
K
K
C
C
LD
0
1
DD
)
(Note2)
(Note3)
LOGIC
CTRL
GEN
ADD
REG
CLK
(Note2)
18Mb Pipelined
DDR™II SRAM
Burst of 4
SELECT OUTPUT CONTROL
WRITE DRIVER
MEMORY
ARRAY
18M
1
(Note1)
Description
nous memories with a double-data-rate (DDR), bidirectional data port.
This scheme allows maximization on the bandwidth on the data bus by
passing two data items per clock cycle. The address bus operates at
less than single data rate speeds,allowing the user to fan out addresses
and ease system design while maintaining maximum performance on
data transfers.
and echo clocks, allowing the user to tune the bus for low noise and high
performance.
beyond SRAM devices that use any form of TTL interface. The inter-
face can be scaled to higher voltages (up to 1.9V) to interface with 1.8V
systems if necessary. The device has a V
allowing the user to designate the interface operational voltage, inde-
pendent of the device core voltage of 1.8V V
control allows the user to adjust the drive strength to adapt to a wide
range of loads and transmission lines.
The IDT DDRII
The DDRII has scalable output impedance on its data output bus
All interfaces of the DDRII SRAM are HSTL, allowing speeds
(Note4)
TM
(Note4)
Burst of four SRAMs are high-speed synchro-
6431 drw 16
(Note1)
IDT71P73204
IDT71P73104
IDT71P73804
IDT71P73604
DD.
DDQ
CQ
DQ
CQ
The output impedance
and a separate Vref,
JULY 2005
DSC-6431/00

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IDT71P73804 Summary of contents

Page 1

... WRITE DRIVER ADD (Note2) REG (Note4) 18M MEMORY CTRL ARRAY LOGIC CLK GEN SELECT OUTPUT CONTROL 1 IDT71P73204 IDT71P73104 IDT71P73804 IDT71P73604 TM Burst of four SRAMs are high-speed synchro- and a separate Vref, DDQ The output impedance DD. (Note4) (Note1 6431 drw 16 JULY 2005 DSC-6431/00 ...

Page 2

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Clocking The DDRII SRAM has two sets of input clocks, namely the K, K clocks and ...

Page 3

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Pin Definitions Symbol Pin Function Data I/O signals. Data inputs are sampled on the rising edge ...

Page 4

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Pin Definitions continued Symbol Pin Function DLL Turn Off. When low this input will turn off ...

Page 5

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Pin Configuration IDT71P73204 ( SS ( ...

Page 6

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Pin Configuration IDT71P73104 ( SS ( ...

Page 7

... IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Pin Configuration IDT71P73804 ( Doff V V REF J NC ...

Page 8

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Pin Configuration IDT71P73604 (512K ...

Page 9

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Write Descriptions (1, Signal Write Byte ...

Page 10

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Application Example R Data Bus Address LD R/W BWx/NWx MEMORY ...

Page 11

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Absolute Maximum Ratings Symbol Rating Supply Voltage on V with DD V TERM Respect to GND ...

Page 12

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Parameter Symbol Input Leakage Current ...

Page 13

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Input Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Parameter Symbol Min Input High ...

Page 14

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst Test Conditions Parameter Symbol Core Power Supply Voltage V DD Output Power Supply Voltage V ...

Page 15

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst Electrical Characteristics Symbol Parameter Clock Parameters tKHKH Average clock cycle time (K,K,C,C) tKC var Cycle ...

Page 16

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Timing Waveform of Combined Read and Write Cycles NOP Read A0 Read A1 (burst of 4) ...

Page 17

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 IEEE 1149.1 Test Access Port and Boundary Scan-JTAG This part contains an IEEE standard 1149.1 Compatible ...

Page 18

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Scan Register Definition Part Instrustion Register 512Kx36 3 bits 1Mx18 3 bits 2Mx8/x9 3 bits Identification ...

Page 19

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Boundary Scan Exit Order (2M x 8-Bit, 2Mx9-Bit, 1Mx18-Bit) ORDER PIN ...

Page 20

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Boundary Scan Exit Order (512K x 36-Bit) ORDER PIN ...

Page 21

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 JTAG DC Operating Conditions Parameter Symbol Output Power Supply V DDQ Power Supply Voltage V DD ...

Page 22

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 JTAG AC Characteristics Parameter Symbol TCK Cycle Time t CHCH TCK High Pulse Width t CHCL ...

Page 23

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 (1M x 18-Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Package Diagram Outline for 165-Ball Fine Pitch Grid Array Commercial Temperature Range 6.42 23 ...

Page 24

... XX BQ 165 Fine Pitch Ball Grid Array (fBGA) 250 Clock Frequency in MegaHertz 200 167 IDT71P73204 IDT71P73104 IDT71P73804 DDR II SRAM Burst of 4 IDT71P73604 512K x 36 DDR II SRAM Burst of 4 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com 6.42 24 Commercial Temperature Range ...

Page 25

IDT71P73204 (2M x 8-Bit), 71P73104 (2M x 9-Bit), 71P73804 ( -Bit) 71P73604 (512K x 36-Bit DDR II SRAM Burst of 4 Revision History REV DATE PAGES 0 07/29/05 p. 1-24 DESCRIPTION Released Final datasheet Commercial ...

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