IRF1310NS International Rectifier Corp., IRF1310NS Datasheet
![no-image](/images/manufacturer_photos/0/3/339/international_rectifier_corp__sml.jpg)
IRF1310NS
Available stocks
Related parts for IRF1310NS
IRF1310NS Summary of contents
Page 1
... Advanced Process Technology Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ...
Page 2
... IRF1310NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
Page 3
... BOTTOM 4.5V 100 0.1 100 V DS Fig 2. Typical Output Characteristics 3.0 36A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 9.0 10 Junction Temperature ( C) Fig 4. Normalized On-Resistance IRF1310NS/L 4.5V 20us PULSE WIDTH 175 100 , Drain-to-Source Voltage ( 10V 100 120 140 160 180 o J Vs. Temperature ...
Page 4
... IRF1310NS/L 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 10 1 0.1 0.2 0.4 0.6 0.8 1.0 V ,Source-to-Drain Voltage (V) SD Fig 7 ...
Page 5
... Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRF1310NS D.U. 10V µ d(off) f ...
Page 6
... IRF1310NS Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 1000 800 ...
Page 7
... D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRF1310NS/L Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period ...
Page 8
... IRF1310NS Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 .93 (. .69 (. .08 (. .25 (. FTER IP. ...
Page 9
... Package Outline TO-262 Outline Part Marking Information TO-262 IRF1310NS/L ...
Page 10
... IRF1310NS/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE C TIO N 33 0.00 (1 4 LLIN ILL ...
Page 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...