IRF7401 International Rectifier, IRF7401 Datasheet
IRF7401
Specifications of IRF7401
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IRF7401 Summary of contents
Page 1
... STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient„ JA HEXFET Max 4.5V GS 0.02 ± 150 Typ. ––– 9.1244C IRF7401 ® Power MOSFET 20V DSS 0.022 DS(on Units 10 8.7 A 7.0 35 2.5 W W/°C V 5.0 V/ns °C Max. Units 50 °C/W 02/13/01 ...
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... IRF7401 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 3. Typical Transfer Characteristics BOT TOM 1. 0.1 V Fig 2. Typical Output Characteristics 2 6.9A D 1.5 1.0 0.5 0.0 A 4.0 4.5 5.0 -60 - Junction T em perature (°C ) Fig 4. Normalized On-Resistance IRF7401 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 20 µ ° rain-to-S ourc e V oltage ( 4. - ...
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... IRF7401 rss iss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° 0° 0.1 0.0 1.0 2 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 100 Single Pulse 0.1 3.0 4.0 Fig 8. Maximum Safe Operating Area = FIG otal G ate C harge ( Fig 6 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4.5V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7401 D.U. µ d(off ...
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... IRF7401 Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. 3mA Current Sampling Resistors Fig 12b. Gate Charge Test Circuit + ...
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... Logic Level and 3V Drive Devices GS Fig 13. For N-Channel HEXFETS Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer „ dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period [ V =10V GS Current di/dt Diode Recovery dv/ Forward Drop [ ] IRF7401 + * *** ...
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... IRF7401 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches 0.25 (.010 0.10 (.004 0.25 (.010 CONTROLLING DIMENSION : INCH MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006 Part Marking Information SO-8 EXAM PLE : 101 IN TER N ATIO N AL F710 TIF IER TOP 45° ATE ( ...
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... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ 1.85 (.07 2) 4 1.65 (.06 5) 3 1.60 (. 1.50 (. .55 (. .45 (. 2 8.10 (. 1 7. ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7401 0 .35 (. .25 (. 2. 1. 5.40 (. 1.90 (. 0 ...