IRF7494 International Rectifier, IRF7494 Datasheet

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IRF7494

Manufacturer Part Number
IRF7494
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
IRF7494
Manufacturer:
ST
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Part Number:
IRF7494TRPBF
Manufacturer:
IR
Quantity:
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Benefits
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Applications
www.irf.com
Notes  through † are on page 8
Absolute Maximum Ratings
V
V
I
I
I
P
dv/dt
T
T
Thermal Resistance
R
R
D
D
DM
J
STG
DS
GS
D
JL
JA
Effective C
App. Note AN1001)
and Current
@ T
@ T
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
@T
A
A
A
= 25°C
= 100°C
= 25°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
to Simplify Design, (See
Parameter
Parameter
c
h
GS
GS
@ 10V
@ 10V
e
V
150V
DSS
G
S
S
S
1
2
3
4
Top View
44m
Typ.
–––
–––
R
:
DS(on)
-55 to + 175
HEXFET
@V
8
7
6
5
Max.
± 20
0.02
150
5.2
3.7
3.0
3.0
42
D
D
D
D
GS
A
A
150
max
= 10V
®
Max.
20
50
IRF7494
Power MOSFET
SO-8
PD - 94641
PD - TBD
5.2A
Units
Units
W/°C
°C/W
I
V/ns
°C
D
W
V
A
1
03/11/03
01/28/03

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IRF7494 Summary of contents

Page 1

... Notes  through † are on page 8 www.irf.com V R DSS DS(on) : 44m 150V Top View @ 10V GS @ 10V Typ. ––– e ––– TBD PD - 94641 IRF7494 ® HEXFET Power MOSFET max 10V 5. SO-8 Max. Units 150 V ± 20 5.2 3 ...

Page 2

... IRF7494 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Fig 2. Typical Output Characteristics 3 5. 10V 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 - Fig 4. Normalized On-Resistance IRF7494 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH Tj = 175° 100 Drain-to-Source Voltage ( 100 120 140 160 180 Junction Temperature (°C) vs ...

Page 4

... IRF7494 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 100. 175°C 10.00 1.00 0.10 0.2 0.3 0.4 0.5 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7494 + - d(off ...

Page 6

... IRF7494 10V Drain Current (A) Fig 12. On-Resistance vs. Drain Current Current Regulator Same Type as D.U. 50K .2 F 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform ...

Page 7

... SO-8 Part Marking www.irf.com 7 C !$Ãb dà ’  Ãb#dà 'YÃG %#%Ãb!$$d "Yà !&Ãb$d IRF7494 DI8C@T HDGGDH@U@ST 9DH HDI H6Y HDI H6Y 6 $"! %'' "$ &$ 6 # ...

Page 8

... IRF7494 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° ...

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