IRFZ44 Vishay, IRFZ44 Datasheet

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-220AB

IRFZ44

Manufacturer Part Number
IRFZ44
Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,50A I(D),TO-220AB
Manufacturer
Vishay
Datasheet

Specifications of IRFZ44

Rohs Compliant
NO
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 31A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91291
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Soldering Recommendations (Peak Temperature)
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 51 A, dI/dt ≤ 250 A/μs, V
= 25 V, starting T
TO-220AB
(Ω)
D
a
J
= 25 °C, L = 44 μH, R
e
c
b
DD
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 175 °C.
60
67
18
25
g
This datasheet is subject to change without notice.
= 25 Ω, I
d
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.028
V
GS
AS
6-32 or M3 screw
at 10 V
= 51 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRFZ44PbF
SiHFZ44-E3
IRFZ44
SiHFZ44
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universially preferred for
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
DM
I
DS
GS
D
AS
D
stg
design,
IRFZ44, SiHFZ44
- 55 to + 175
LIMIT
± 20
200
100
150
300
1.0
4.5
1.1
60
50
36
10
low
www.vishay.com/doc?91000
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRFZ44 Summary of contents

Page 1

... C SYMBOL ° 100 ° °C C dV/ for screw = 25 Ω (see fig. 12 ≤ 175 °C. This datasheet is subject to change without notice. IRFZ44, SiHFZ44 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT ± 200 DM 1.0 W/°C ...

Page 2

... IRFZ44, SiHFZ44 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... Document Number: 91291 S11-0517-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFZ44, SiHFZ44 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

Page 4

... IRFZ44, SiHFZ44 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

Page 5

... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms This datasheet is subject to change without notice. IRFZ44, SiHFZ44 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

Page 6

... IRFZ44, SiHFZ44 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH This datasheet is subject to change without notice. Current regulator Same type as D.U.T. ...

Page 7

... D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level device Fig For N-Channel This datasheet is subject to change without notice. IRFZ44, SiHFZ44 Vishay Siliconix + + www.vishay.com www.vishay.com/doc?91000 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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