PESD3V3S4UD,115 NXP Semiconductors, PESD3V3S4UD,115 Datasheet - Page 10

• Manufacturer Part Number: PESD3V3S4UD,115
• Description: DIODE ARRAY ESD 3.3V 6-TSOP
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD3V3S4UD,115

• Package / Case: 6-TSOP
• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5.3V
• Power (watts): 200W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 12 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 20 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 215 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.7 mm W x 3.1 mm L x 1.1 mm H
• Number Of Elements: 4
• Package Type: SC-74
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 5.3V
• Reverse Stand-off Voltage: 3.3V
• Leakage Current (max): 800uA
• Peak Pulse Current: 20A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4266-2; 934059301115; PESD3V3S4UD T/R

NXP Semiconductors
10. Revision history
Table 10.
PESDXS4UD_SER_2
Product data sheet
Document ID
PESDXS4UD_SER_2
Modifications:
PESDXS4UD_SER_1
Revision history
Release date
20090821
20060704
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 21 August 2009
Quadruple ESD protection diode arrays in a SOT457 package
Change notice
-
-
PESDxS4UD series
Supersedes
PESDXS4UD_SER_1
-
© NXP B.V. 2009. All rights reserved.
10 of 12