ATTINY13V-10MMU Atmel, ATTINY13V-10MMU Datasheet - Page 6

MCU AVR 1K ISP FLASH 1.8V 10-QFN

ATTINY13V-10MMU

Manufacturer Part Number
ATTINY13V-10MMU
Description
MCU AVR 1K ISP FLASH 1.8V 10-QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY13V-10MMU

Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
1KB (512 x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
10-MLF®, 10-DFN
Processor Series
ATTINY1x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
SPI
Maximum Clock Frequency
10 MHz
Number Of Programmable I/os
6
Number Of Timers
1
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
10MLF EP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
10 MHz
Operating Supply Voltage
2.5|3.3|5 V
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Connectivity
-
Lead Free Status / Rohs Status
 Details
3. General Information
3.1
3.2
3.3
6
Resources
Code Examples
Data Retention
ATtiny13
A comprehensive set of drivers, application notes, data sheets and descriptions on development
tools are available for download at http://www.atmel.com/avr.
This documentation contains simple code examples that briefly show how to use various parts of
the device. These code examples assume that the part specific header file is included before
compilation. Be aware that not all C compiler vendors include bit definitions in the header files
and interrupt handling in C is compiler dependent. Please confirm with the C compiler documen-
tation for more details.
Reliability Qualification results show that the projected data retention failure rate is much less
than 1 PPM over 20 years at 85°C or 100 years at 25°C.
2535JS–AVR–08/10

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