M306N4FGTFP#U0 Renesas Electronics America, M306N4FGTFP#U0 Datasheet - Page 92

• Manufacturer Part Number: M306N4FGTFP#U0
• Description: MCU 5V 256K T-TEMP PB-FREE 100-Q
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/6Nr

Specifications of M306N4FGTFP#U0

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: CAN, I²C, IEBus, SIO, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 85
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 10K x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-QFP
• For Use With: R0K3306NKS001BE - KIT DEV RSK RSK-M16C/6NKR0K3306NKS000BE - KIT DEV RSK RSK-M16C/6NK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

2.00 Nov. 10, 2004
2.10 Jun. 24, 2005
2.40 Aug. 25, 2006
Rev.
Date
REVISION HISTORY
44, 45
46, 47
Page
34
35
36
38
39
40
41
42
49
50
19
32
33
34
–
2
4
–
1
4
Table 5.6 A/D Conversion Characteristics: "Tolerance Level Impedance" is added.
Table 5.8 Power Supply Circuit Timing Characteristics: "t
Figure 5.2 Power Supply Circuit Timing Diagram is added.
Table 5.10 Memory Expansion Mode and Microprocessor Mode: "t
Table 5.21 Serial I/O: Min. of standard in t
Table 5.23 Memory Expansion Mode and Microprocessor Mode (for setting with no wait)
Table 5.24 Memory Expansion Mode and Microprocessor Mode (for 1- to 3-wait setting
and external area access)
Table 5.25 Memory Expansion Mode and Microprocessor Mode (for 2- to 3-wait setting,
external area access and multiplexed bus selection)
Figure 5.4 Timing Diagram (1): "XIN input" is added.
Figures 5.6 and 5.7 Timing Diagram (3) (4): "DB" in Read timing is revised to "DBi".
Figures 5.8 and 5.9 Timing Diagram (5) (6): "DB" in Write timing is revised to "DBi".
Figure 5.11 Timing Diagram (8)
Appendix 1. Package Dimensions: 100P6Q-A is added.
Revised edition issued
* The contents of product are revised. (Normal-ver. is added.)
* Revised parts and revised contents are as follows (except for expressional change).
Table 1.1 Performance outline of M16C/6N Group (M16C/6N4)
Table 1.2 Product List is revised. (Normal-ver. is added.)
Figure 1.2 Type No., Memory Size, and Package:
Figure 4.7 SFR Information (7): NOTE 1 is revised.
Table 5.4 Electrical Characteristics (1)
Table 5.5 Electrical Characteristics (2): Mask ROM (5th item)
Table 5.6 A/D Conversion Characteristics: “Tolerance Level Impedance” is deleted.
Revised edition issued
* Electric Characteristics of Normal-ver. is added.
* Revised parts and revised contents are as follows (except for expressional change).
1.1 Applications: Comment of Normal-ver. is added.
Table 1.2 Product Information
• Max. of Standard in t
• t
• Max. of Standard in t
• t
• t
• Max. of Standard in t
• "ADi/DB" in Read/Write timing is revised to "ADi/DBi".
• Performance outline of Normal-ver. is added.
• "(no): Normal-ver." is added to Characteristics.
• Measuring Condition of V
• “f(XCIN)” is changed to “(f(BCLK)).
• Status of development is revised and NOTES 1 and 2 are added.
d(BCLK-HLDA)
d(BCLK-HLDA)
d(BCLK-HLDA)
is added.
is added.
is added.
d(BCLK-ALE)
d(BCLK-ALE)
d(BCLK-ALE)
A-2
M16C/6N Group (M16C/6N4) Data Sheet
OL
is revised from “L
Description
is revised from "25" to "15".
is revised from "25" to "15".
is revised from "25" to "15".
Summary
su(D-C)
is revised from "30" to "70".
OL
= –200µA” to “L
d(M-L)
" is deleted.
d(BCLK-HLDA)
OL
= 200µA”.
" is deleted.