PIC18F4439T-E/ML Microchip Technology, PIC18F4439T-E/ML Datasheet - Page 269
![IC PIC MCU FLASH 6KX16 44QFN](/photos/6/81/68122/150-44-qfn_sml.jpg)
PIC18F4439T-E/ML
Manufacturer Part Number
PIC18F4439T-E/ML
Description
IC PIC MCU FLASH 6KX16 44QFN
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F2439-ISO.pdf
(322 pages)
3.PIC18F2439-ISO.pdf
(6 pages)
4.PIC18F2439-ISO.pdf
(34 pages)
Specifications of PIC18F4439T-E/ML
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
12KB (6K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
640 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
44-QFN
Processor Series
PIC18F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
640 B
Interface Type
I2C, SPI, AUSART
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
32
Number Of Timers
16 bit
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
DV164005, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- PIC16F616T-ISL PDF datasheet
- PIC18F2439-ISO PDF datasheet #2
- PIC18F2439-ISO PDF datasheet #3
- PIC18F2439-ISO PDF datasheet #4
- Current page: 269 of 322
- Download datasheet (7Mb)
TABLE 23-2:
2002 Microchip Technology Inc.
DC Characteristics
D110
D113
D120
D121
D122
D123
D123A T
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D134A T
Note 1: Retention time is valid, provided no other specifications are violated.
Param
No.
2: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
DDP
Sym
RETD
RETD
REF
IE
IW
IW
RETD
RETD
only and are not tested.
DEW
PP
D
DRW
P
PR
IE
IW
PEW
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program FLASH Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
(2)
pin
Preliminary
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ T
100K
V
V
V
9.00
Min
10K
100
100
1M
4.5
4.5
40
40
—
MIN
—
MIN
MIN
—
—
1
Typ†
100K
10M
1M
—
—
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
—
—
-40°C ≤ T
Units
Year Provided no other
Year 25°C (Note 1)
Year Provided no other
Year 25°C (Note 1)
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
ms
ms
ms
ms
V
V
V
V
V
V
A
A
PIC18FXX39
≤ +85°C for industrial
≤ +125°C for extended
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP port
Using ICSP port
V
voltage
V
V
specifications are violated
MIN
MIN
MIN
DD
DD
≥ 4.5V
≥ 4.5V
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS30485A-page 267
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