MCP6V08T-E/MNY Microchip Technology, MCP6V08T-E/MNY Datasheet - Page 4

• Manufacturer Part Number: MCP6V08T-E/MNY
• Description: IC OPAMP AUTO-ZERO SGL 8-TDFN
• Manufacturer: Microchip Technology

Specifications of MCP6V08T-E/MNY

• Slew Rate: 0.5 V/µs
• Package / Case: 8-TDFN
• Amplifier Type: Chopper (Zero-Drift)
• Number Of Circuits: 1
• Output Type: Rail-to-Rail
• Gain Bandwidth Product: 1.3MHz
• Current - Input Bias: 6pA
• Voltage - Input Offset: 3µV
• Current - Supply: 300µA
• Current - Output / Channel: 22mA
• Voltage - Supply, Single/dual (±): 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Channels: 1
• Common Mode Rejection Ratio (min): 120 dB
• Input Offset Voltage: 0.003 mV
• Input Bias Current (max): 5000 pA
• Operating Supply Voltage: 3 V, 5 V
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Shutdown: No
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Technology: CMOS
• Voltage Gain Db: 158 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MCP6V08T-E/MNYTR

MCP6V06/7/8
TABLE 1-3:
TABLE 1-4:
DS22093A-page 4
Electrical Characteristics: Unless otherwise indicated, T
V
CS Pull-Down Resistor (MCP6V08)
CS Pull-Down Resistor
CS Low Specifications (MCP6V08)
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications (MCP6V08)
CS Logic Threshold, High
CS Input Current, High
CS Input High, GND Current per
amplifier
Amplifier Output Leakage, CS High I
CS Dynamic Specifications (MCP6V08)
CS Low to Amplifier Output On
Turn-on Time
CS High to Amplifier Output High-Z
Internal Hysteresis
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 8L-4×4 DFN
Thermal Resistance, 8L-SOIC
Note 1:
OUT
= V
2:
DD
Parameters
/2, V
Operation must not cause T
Measured on a standard JC51-7, four layer printed circuit board with ground plane and vias.
Parameters
L
= V
DIGITAL ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
DD
/2, R
L
= 20 kΩ to V
O_LEAK
V
Sym
I
R
I
t
V
t
HYST
V
CSH
I
I
OFF
CSL
ON
SS
SS
J
PD
IH
IL
to exceed Maximum Junction Temperature specification (150°C).
L
, C
0.7V
Sym
L
θ
θ
T
T
T
V
Min
JA
JA
= 60 pF, and CS = GND (refer to
—
—
—
—
—
—
—
—
A
A
A
3
SS
DD
Min
V
-40
-40
-65
—
—
A
DD
0.25
-0.7
-2.3
Typ
= +25°C, V
20
11
10
—
—
5
5
/R
PD
Typ
150
44
—
—
—
0.3V
Max Units
V
100
DD
—
—
—
—
—
—
—
—
DD
DD
= +1.8V to +5.5V, V
Max
+125
+125
+150
—
—
MΩ
pA
pA
µA
µA
pA
µs
µs
V
V
V
Figure 1-5
DD
Units
°C/W
°C/W
CS = V
CS = V
CS = V
CS = V
CS = V
CS Low = V
V
CS High = V
V
°C
°C
°C
OUT
OUT
= +1.8V to +5.5V, V
= 0.9 V
= 0.1 V
and
SS
DD
DD
DD
DD
(Note 1)
(Note 2)
SS
, V
, V
= GND, V
Figure
© 2008 Microchip Technology Inc.
SS
DD
DD
DD
DD
DD
+0.3 V, G = +1 V/V,
Conditions
= 1.8V
= 5.5V
/2
– 0.3 V, G = +1 V/V,
/2
1-6).
Conditions
CM
SS
= V
= GND.
DD
/3,