OP292GSZ Analog Devices Inc, OP292GSZ Datasheet - Page 4

• Manufacturer Part Number: OP292GSZ
• Description: IC OPAMP GP 4MHZ DUAL 8SOIC
• Manufacturer: Analog Devices Inc

Specifications of OP292GSZ

• Slew Rate: 4 V/µs
• Amplifier Type: General Purpose
• Number Of Circuits: 2
• Gain Bandwidth Product: 4MHz
• Current - Input Bias: 375nA
• Voltage - Input Offset: 1000µV
• Current - Supply: 1mA
• Current - Output / Channel: 10.5mA
• Voltage - Supply, Single/dual (±): 4.5 V ~ 33 V, ±2.25 V ~ 16.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Op Amp Type: General Purpose
• No. Of Amplifiers: 2
• Bandwidth: 4MHz
• Supply Voltage Range: 4.5V To 33V
• Amplifier Case Style: SOIC
• No. Of Pins: 8
• Channel Separation: 100
• Common Mode Rejection Ratio: 95
• Current, Input Bias: 450 nA
• Current, Input Offset: 7 nA
• Current, Output: 8 mA
• Current, Supply: 0.8 mA
• Impedance, Thermal: 43 °C/W
• Number Of Amplifiers: Dual
• Package Type: SOIC-8
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Gain: 200 V/mV
• Voltage, Input: 4 V
• Voltage, Noise: 15 nV/sqrt Hz
• Voltage, Offset: 0.1 mV
• Voltage, Output, High: 4.1 V
• Voltage, Output, Low: 280 mV
• Voltage, Supply: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Output Type: -
• -3db Bandwidth: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

OP292/OP492
Parameter
DYNAMIC PERFORMANCE
NOISE PERFORMANCE
1
V
Table 2.
Parameter
INPUT CHARACTERISTICS
OUTPUT CHARACTERISTICS
POWER SUPPLY
Long-term offset voltage drift is guaranteed by 1,000 hours life test performed on three independent wafer lots at 125°C with LTPD of 1.3.
S
Slew Rate
Gain Bandwidth Product
Phase Margin
Channel Separation
Voltage Noise
Voltage Noise Density
Current Noise Density
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Output Voltage Swing
Short-Circuit Current Limit
Power Supply Rejection Ratio
Supply Current Per Amp
=±15 V, V
OP292
OP492
CM
= 0 V, V
1
O
= 2 V, T
A
= 25°C, unless otherwise noted.
Symbol
GBP
φ
e
e
i
SR
CS
n
n
n
m
Symbol
V
V
I
I
CMRR
A
ΔV
ΔI
V
I
PSRR
I
p-p
B
OS
SC
SY
OS
OS
O
VO
B
OS
/ΔT
/ΔT
Rev. C | Page 4 of 20
Conditions
R
−40°C ≤ T
f
0.1 Hz to 10 Hz
f = 1 kHz
O
L
= 1 kHz
= 10 kΩ
Conditions
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
V
−40°C ≤ T
R
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
−40°C ≤ T
R
−40°C ≤ T
R
−40°C ≤ T
Short circuit to GND
V
−40°C ≤ T
V
L
L
L
CM
S
O
= 10 kΩ, V
= 2 kΩ to GND
= 100 kΩ to GND
= ±2.25 V to ±15 V
= 0 V
= ±11 V
A
≤ +125°C
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
≤ +85°C
≤ +125°C
≤ +85°C
≤ +125°C
≤ +125°C
≤ +85°C
≤ +125°C
≤ +125°C
≤ +85°C
≤ +125°C
≤ +125°C
≤ +125°C
≤ +125°C
≤ +125°C
≤ +125°C
O
=±10 V
Min
−11
78
75
25
10
5
±11
±10
±13.8
±13.5
8
75
70
Min
1
Typ
1.0
1.2
1.5
1.4
1.7
2
375
0.5
7
20
0.4
100
95
120
75
60
4
3
±11
±14.3
±14.0
10.5
86
83
1
±12.2
Typ
3
2
4
75
100
25
15
0.7
Max
Max
2.0
2.5
3
2.5
2.8
3
700
1
50
100
1.2
+11
10
1.4
Unit
V/μs
V/μs
MHz
Degrees
dB
μV p-p
nV/√Hz
pA/√Hz
Unit
mV
mV
mV
mV
mV
mV
nA
μA
nA
nA
μA
V
dB
dB
V/mV
V/mV
V/mV
μV/°C
pA/°C
V
V
V
mV
mA
dB
dB
mA