AD8021AR Analog Devices Inc, AD8021AR Datasheet - Page 7

IC OPAMP VF LN LP LDIST 8SOIC

AD8021AR

Manufacturer Part Number
AD8021AR
Description
IC OPAMP VF LN LP LDIST 8SOIC
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD8021AR

Slew Rate
460 V/µs
Rohs Status
RoHS non-compliant
Design Resources
Driving the AD7366/7 Bipolar SAR ADC in Low-Distortion DC-Coupled Appls (CN0042)
Amplifier Type
Voltage Feedback
Number Of Circuits
1
-3db Bandwidth
560MHz
Current - Input Bias
7.5µA
Voltage - Input Offset
400µV
Current - Supply
7.8mA
Current - Output / Channel
70mA
Voltage - Supply, Single/dual (±)
4.5 V ~ 24 V, ±2.25 V ~ 12 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
No. Of Amplifiers
1
Bandwidth
560MHz
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Peak Reflow Compatible (260 C)
No
Input Bias Current
7500nA
Output Type
-
Gain Bandwidth Product
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Power Dissipation
Input Voltage (Common Mode)
Differential Input Voltage
Differential Input Current
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
The AD8021 inputs are protected by diodes. Current-limiting resistors are
not used to preserve the low noise. If a differential input exceeds ±0.8 V, the
input current should be limited to ±10 mA.
1
Rating
26.4 V
Observed power
derating curves
±V
±0.8 V
±10 mA
Observed power
derating curves
−65°C to +125°C
−40°C to +85°C
300°C
S
± 1 V
Rev. F | Page 7 of 28
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8021 is limited by the associated rise in junction tempera-
ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition
temperature of the plastic, approximately 150°C. Temporarily
exceeding this limit can cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.
Exceeding a junction temperature of 175°C for an extended
period can result in device failure.
While the AD8021 is internally short-circuit protected, this can
not be sufficient to guarantee that the maximum junction tem-
perature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum
power derating curves.
1
Specification is for device in free air: 8-lead SOIC: θ
MSOP: θ
0.01
2.0
1.5
1.0
0.5
JA
Figure 3. Maximum Power Dissipation vs. Temperature
= 145°C/W.
–55 –45 –35 –25 –15 –5 5 15 25 35 45
AMBIENT TEMPERATURE (°C)
8-LEAD MSOP
8-LEAD SOIC
JA
= 125°C/W; 8-lead
55 65 75
AD8021
1

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