TCM809TENB713 Microchip Technology, TCM809TENB713 Datasheet - Page 2

IC RESET MONITOR 3.08V SOT23B

TCM809TENB713

Manufacturer Part Number
TCM809TENB713
Description
IC RESET MONITOR 3.08V SOT23B
Manufacturer
Microchip Technology
Type
Simple Reset/Power-On Resetr
Datasheets

Specifications of TCM809TENB713

Number Of Voltages Monitored
1
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Output
Push-Pull, Totem Pole
Reset
Active Low
Reset Timeout
140 ms Minimum
Voltage - Threshold
3.08V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Chip Enable Signals
No
Minimum Operating Temperature
- 40 C
Operating Temperature Range
- 65 C to + 150 C
Output Type
Active Low or Push-Pull
Power Fail Detection
No
Monitored Voltage
2.5 V or 3 V or 3.3 V or 5 V
Undervoltage Threshold
3.04 V
Overvoltage Threshold
3.11 V
Manual Reset
No
Watchdog
No
Battery Backup Switching
No
Power-up Reset Delay (typ)
560 ms
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1 V
Supply Current (typ)
9 uA (Typ)
Maximum Power Dissipation
320 mW
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 85 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
158-2025-2
158-2025-2
TCM809TENB713TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCM809TENB713
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Part Number:
TCM809TENB713
0
TCM809/TCM810
1.0
Absolute Maximum Ratings†
Supply Voltage (V
RESET, RESET ................................................... -0.3V to (V
Input Current, V
Output Current, RESET, RESET.................................................20 mA
dV/dt (V
Operating Temperature Range ...................................-40°C to +125°C
Power Dissipation (T
Storage Temperature Range .......................................-65°C to +150°C
Maximum Junction Temperature, T
ELECTRICAL CHARACTERISTICS
DS21661D-page 2
3-Pin SOT-23B (derate 4 mW/°C above +70°C) ....................320 mW
3-Pin SC-70 (derate 2.17 mW/°C above +70°C)....................174 mW
V
V
V
Supply Current
Reset Threshold (Note 2)
Reset Threshold Tempco
V
Reset Active Time Out
Period
RESET Output Voltage
Low (TCM809)
RESET Output Voltage
High (TCM809)
RESET Output Voltage
Low (TCM810)
RESET Output Voltage
High (TCM810)
Note 1: Production testing done at T
DD
DD
DD
DD
= Full Range, T
= 5V for L/M/J, 3.3V for T/S, 3.0V for R and 2.5V for Z (Note 1).
Range
to Reset Delay,
DD
2: RESET output for TCM809, RESET output for TCM810.
Parameter
)........................................................................... 100V/µsec
ELECTRICAL
CHARACTERISTICS
DD
DD
.......................................................................20 mA
A
to GND) ........................................................6.0V
= 70°C):
A
= Operating Temperature Range, unless otherwise noted. Typical values are at T
Sym
V
V
V
V
V
I
J
CC
OH
OH
............................................ 150°C
TH
OL
OL
V
0.8 V
0.8 V
DD
4.56
4.50
4.31
4.25
3.93
3.89
3.04
3.00
2.89
2.85
2.59
2.55
2.28
2.25
Min
140
A
1.0
1.2
– 1.5
= +25°C, overtemperature limits ensured by QC screen.
DD
DD
4.63
4.38
4.00
3.08
2.93
2.63
2.32
Typ
320
12
30
65
DD
9
+0.3V)
Max
4.70
4.75
4.45
4.50
4.06
4.10
3.11
3.15
2.96
3.00
2.66
2.70
2.35
2.38
560
5.5
5.5
0.3
0.4
0.3
0.3
0.4
30
25
ppm/°C
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Units
msec
µsec
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
T
TCM8xxL/M/J:
TCM8xxR/S/T/Z:
TCM8xxL:
TCM8xxM:
TCM809J:
TCM8xxT:
TCM8xxS:
TCM8xxR:
TCM8xxZ:
V
TCM809R/S/T/Z:
TCM809L/M/J:
V
TCM809R/S/T/Z: V
TCM809L/M/J: V
TCM810R/S/T/Z:V
TCM810L/M:
1.8 < V
A
A
DD
DD
= 0°C to +70°C
= – 40°C to +125°C
= V
> 1.0V, I
DD
TH
< V
to (V
SINK
TH
V
TH
min, I
DD
Test Conditions
= 50 µA
DD
© 2005 Microchip Technology Inc.
DD
– 100 mV) (Note 2)
DD
V
V
T
T
T
T
T
T
T
T
T
T
T
T
T
T
V
V
= V
A
A
A
A
A
A
A
A
A
A
A
A
A
A
DD
DD
> V
DD
DD
= V
> V
SOURCE
= +25°C
= – 40°C to +125°C
= +25°C
= – 40°C to +125°C
= +25°C
= – 40°C to +125°C
= +25°C
= – 40°C to +125°C
= +25°C
= – 40°C to +125°C
= +25°C
= – 40°C to +125°C
= +25°C
= – 40°C to +125°C
A
TH
< 5.5V
< 3.6V
TH
= V
= V
TH
= +25°C,
TH
max, I
max, I
max, I
TH
TH
max, I
= 150 µA
min, I
min, I
SINK
SOURCE
SINK
SOURCE
SINK
SINK
= 3.2 mA
= 1.2 mA
= 1.2 mA
= 3.2 mA
= 800 µA
= 500 µA

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