MCP1801T-5002I/OT Microchip Technology, MCP1801T-5002I/OT Datasheet - Page 18

• Manufacturer Part Number: MCP1801T-5002I/OT
• Description: IC REG LDO 150MA 5.0V SOT23-5
• Manufacturer: Microchip Technology

Specifications of MCP1801T-5002I/OT

• Package / Case: SOT-23-5, SC-74A, SOT-25
• Regulator Topology: Positive Fixed
• Voltage - Output: 5V
• Voltage - Input: Up to 10V
• Voltage - Dropout (typical): 0.2V @ 100mA
• Number Of Regulators: 1
• Current - Output: 150mA (Min)
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Number Of Outputs: 1
• Polarity: Positive
• Input Voltage Max: 10 V
• Output Voltage: 5 V
• Output Type: Fixed
• Dropout Voltage (max): 0.09 V at 30 mA
• Output Current: 150 mA
• Line Regulation: 0.2 % / V
• Load Regulation: 50 mV
• Voltage Regulation Accuracy: 2 %
• Maximum Power Dissipation: 0.25 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Limit (min): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MCP1801T-5002I/OT; MCP1801T-5002I/OTTR

MCP1801
EQUATION 6-5:
6.3
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
6.3.1
DS22051D-page 18
Package
Input Voltage
LDO Output Voltages and Currents
Maximum Ambient Temperature
Internal Power Dissipation
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V
Where:
Package Type: SOT-23-5
IN
P
T
to V
LDO(MAX)
J(RISE)
T
A(MAX)
Voltage Regulator
OUT
V
P
P
T
T
I
OUT
OUT
LDO
LDO
A
V
POWER DISSIPATION EXAMPLE
J
IN
).
= 2.4V to 5.0V
= 1.8V
= 50 mA
= +40°C
= (V
= (5.0V - (0.98 x 1.8V)) x 50 mA
= 161.8 milli-Watts
=
=
=
T
J
Junction Temperature
Rise in device junction
temperature over the ambient
temperature
Ambient temperature
IN(MAX)
=
T
J RISE

- V

OUT(MIN)
+
T
A
) x I
OUT(MAX)
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The
thermal resistance from junction to ambient (R
derived from an EIA/JEDEC standard for measuring
thermal resistance for small surface mount packages.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the
test method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT-23 Can Dissipate in an
Application”,
regarding this subject.
T
T
T
J(RISE)
JRISE
JRISE
= P
= 161.8 milli-Watts x 256.0
= 41.42
(DS00792),
TOTAL
°
C
 2010 Microchip Technology Inc.
x Rq
JA
for
more
°
C/Watt
information
JA
) is