DALC112S1 STMicroelectronics, DALC112S1 Datasheet
DALC112S1
Manufacturer Part Number
DALC112S1
Description
DIODE ARRAY LO CAPACIT 8-SOIC
Manufacturer
STMicroelectronics
Datasheet
1.DALC112S1RL.pdf
(3 pages)
Specifications of DALC112S1
Voltage - Reverse Standoff (typ)
15V
Polarization
6 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Applications
General Purpose
Number Of Circuits
6
Voltage - Working
18V
Technology
Diode Array
Product
Standard Recovery Rectifier
Configuration
Array 12
Reverse Voltage
18 V
Forward Voltage Drop
1.3 V
Forward Continuous Current
8 A
Reverse Current Ir
2 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Clamping
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2695-5
Available stocks
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Part Number
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Price
Company:
Part Number:
DALC112S1
Manufacturer:
STMicroelectronics
Quantity:
2 084
Company:
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DALC112S1
Manufacturer:
STM
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3 200
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DALC112S1
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PROTEK
Quantity:
20 000
Part Number:
DALC112S1CPQRL
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ST
Quantity:
20 000
Company:
Part Number:
DALC112S1RL
Manufacturer:
STMicroelectronics
Quantity:
2 677
MAIN APPLICATIONS
Where ESD protection for high speed datalines is
required :
DESCRIPTION
ARRAY of 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
Its very low capacitance allows to protect fast
signals with no distortion. It is particularly suited for
the protection of graphic video ports.
FEATURES
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
IEC1000-4-2level 3
January 1998 - Ed: 4
Application Specific Discretes
LAN / WAN equipment
Computer I/O
Graphic video port
Set top box I/O
ARRAYOF 12 DIODESFOR ESDPROTECTION.
PEAK REVERSE VOLTAGE V
DIODE.
VERYLOWCAPACITANCE PERDIODE: C <5pF.
VERY LOW LEAKAGE CURRENT : I
A.S.D.
8 kV (air discharge)
6 kV (contactdischarge)
TM
RRM
= 18V PER
R
< 2 A.
ARRAY FOR ESD PROTECTION
FUNCTIONAL DIAGRAM
LOW CAPACITANCE DIODE
I/O 1
I/O 2
I/O 3
I/O 4
SO8
DALC112S1
REF 1
I/O 6
REF 2
I/O 5
1/3
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DALC112S1 Summary of contents
Page 1
... RRM DIODE. VERYLOWCAPACITANCE PERDIODE: C <5pF. VERY LOW LEAKAGE CURRENT : I COMPLIESWITHTHE FOLLOWINGSTANDARDS : IEC1000-4-2level (air discharge (contactdischarge) January 1998 - Ed: 4 LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION FUNCTIONAL DIAGRAM = 18V PER I/O 1 I/O 2 < I/O 3 I/O 4 DALC112S1 SO8 REF 1 I/O 6 REF 2 I/O 5 1/3 ...
Page 2
... Reverse leakage current per diode R Input capacitance between Line and GND mV MHz cc RMS (see figure 1 below) Fig 1 : Input capacitance measurement REF2 I REF1 2/3 Vcc DALC112S1 =25 C). amb Parameter = 25 C). amb Parameter connected between REF1 and REF2 CC Input applied : Vcc = 5V mV MHz ...
Page 3
... 0.35 b1 0. 4.8 E 5.8 e 1.27 e3 3.81 F 3 DALC112S1 Packaging (Base Qty) DIMENSIONS Inches Max. Min. Typ. Max. 1.75 0.069 0.25 0.004 0.010 1.65 0.065 0.48 0.014 0.019 0.25 0.007 0.010 0.020 45 (typ) 5.0 0.189 0.197 6.2 0.228 0.244 ...