UPG2314T5NZIGBEE_BT-EV CEL, UPG2314T5NZIGBEE_BT-EV Datasheet

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UPG2314T5NZIGBEE_BT-EV

Manufacturer Part Number
UPG2314T5NZIGBEE_BT-EV
Description
EVAL KIT FOR UPG2314
Manufacturer
CEL
Type
802.15.4/Zigbeer
Datasheet
1.UPG2314T5NZIGBEE_BT-EV.pdf (11 pages)

Specifications of UPG2314T5NZIGBEE_BT-EV

Contents
Board
For Use With/related Products
UPG2314T5N
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Document No. PG10624EJ02V0DS (2nd edition)
Date Published February 2008 NS
DESCRIPTION
a 6-pin plastic TSON (Thin Small Out-line Non-leaded) package. And this package is able to high-density surface
mounting.
FEATURES
• Operation frequency
• Supply voltage
• Control voltage
• Circuit current
• Output power
• Gain control range
• High efficiency
• High-density surface mounting : 6-pin plastic TSON package (1.5 × 1.5 × 0.37 mm)
APPLICATIONS
• Power Amplifier for Bluetooth Class 1
ORDERING INFORMATION
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
μ
PG2314T5N-E2
Remark To order evaluation samples, contact your nearby sales office.
The
This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
Part Number
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
μ
PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1.
Part number for sample order:
μ
PG2314T5N-E2-A
Order Number
POWER AMPLIFIER FOR Bluetooth
: f
: V
: V
: V
: I
: P
: GCR = 23 dB TYP. @ V
: PAE = 50% TYP.
P
P
P
opt
CC
CC
cont
bias
in
out
in
in
6-pin plastic TSON
(Pb-Free)
= 0 dBm
= 0 dBm
= 0 dBm
= 2 400 to 2 500 MHz (2 450 MHz TYP.)
= 65 mA TYP. @ V
1, 2 = 2.7 to 3.6 V (3.0 V TYP.)
The mark <R> shows major revised points.
= +20 dBm TYP. @ V
+ V
= 0 to 3.6 V (3.0 V TYP.)
μ
enable
Package
PG2314T5N-A
= 0 to 3.1 V (3.0 V TYP.)
CC
CC
1, 2 = 3.0 V, V
Marking
CC
G5D
1, 2 = 3.0 V, V
1, 2 = 3.0 V, V
GaAs HBT INTEGRATED CIRCUIT
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 3 kpcs/reel
bias
bias
μ
+ V
bias
+ V
TM
enable
+ V
PG2314T5N
enable
enable
Class 1
Supplying Form
= 3.0 V, V
= 3.0 V, V
= 3.0 V, V
cont
cont
cont
= 3.0 V,
= 0 to 3.0 V,
= 3.0 V,
2006, 2008

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UPG2314T5NZIGBEE_BT-EV Summary of contents

Page 1

POWER AMPLIFIER FOR Bluetooth DESCRIPTION μ The PG2314T5N is GaAs HBT MMIC for power amplifier which was developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is ...

Page 2

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) (Top View Bias Circuit ABSOLUTE MAXIMUM RATINGS (T Parameter Symbol Supply Voltage bias V enable Control Voltage V Circuit Current ...

Page 3

ELECTRICAL CHARACTERISTICS (T = +25° bias enable output matching, unless otherwise specified) Parameter Symbol Circuit Current I Shut Down Current I shut down Output Power 1 P Output Power 2 P ...

Page 4

EVALUATION CIRCUIT OUTPUT bias enable 3 V cont The application circuits and their parameters are for reference only and are not intended for use in actual ...

Page 5

TYPICAL CHARACTERISTICS (T Condition : 450 MHz CIRCUIT CURRENT, EFFICIENCY, OUTPUT POWER vs. INPUT POWER –25 Condition : f ...

Page 6

Condition : 450 MHz OUTPUT POWER, 2f EFFICIENCY vs. SUPPLY VOLTAGE –10 –20 –30 –40 1.5 Condition : ...

Page 7

MOUNTING PAD AND SOLDER MASK LAYOUT DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) Remark The mounting pad and solder mask layouts in this document are for reference only. MOUNTING PAD 0.3 0.5 0.3 0.3 SOLDER MASK 0.475 0.25 0.475 0.25 Solder ...

Page 8

PACKAGE DIMENSIONS 6-PIN PLASTIC TSON (UNIT: mm) (Top View) 1.5±0.1 8 (Side View) +0.03 0.37 0.2±0.1 –0.05 Data Sheet PG10624EJ02V0DS μ PG2314T5N (Bottom View) 0.3±0.07 0.7±0.1 ...

Page 9

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Peak temperature (package surface temperature) Time at peak ...

Page 10

Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of February, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC ...

Page 11

This product uses gallium arsenide (GaAs). Caution GaAs Products GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If ...

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