MSA-0770 Avago Technologies US Inc., MSA-0770 Datasheet - Page 2

• Manufacturer Part Number: MSA-0770
• Description: AMP MMIC SI BIPOLAR 70-MIL PKG
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of MSA-0770

• Gain: 12.5dB ~ 14.5dB
• Rf Type: ISM
• Current - Supply: 15mA ~ 40mA
• Frequency: 0Hz ~ 2.5GHz
• Noise Figure: 4.5dB
• P1db: 5.5dBm
• Package / Case: 4-SMD (70 mil)
• Test Frequency: 1GHz
• Voltage - Supply: 3.6V ~ 4.4V
• Frequency Range: 0.1GHz To 2.5GHz
• Noise Figure Typ: 4.5dB
• Power Dissipation Pd: 275mW
• Supply Current: 40mA
• Supply Voltage Range: 3.6V To 4.4V
• Number Of Channels: 1
• Frequency (max): 25GHz
• Output Power: 5.5@1000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 3.6V
• Single Supply Voltage (typ): 4V
• Single Supply Voltage (max): 4.4V
• Package Type: Case 70
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 4
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MSA-0770 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.7 mW/°C for T
4. Ths small spot size of this technique results in a higher, though more accurate determination
Electrical Specifications
Note:
1. The recommended operating current range for this device is 15 to 40 mA.
Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
∆G
f
NF
P
IP
t
V
dV/dT
3 dB
D
1 dB
d
P
3
of θ
Typical performance as a function of current is on the following page.
CASE
P

jc
than do alternate methods.
= 25°C.
[,3]
Parameters and Test Conditions: I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
C
[1]
> 164°C.
, T
1
A
|
= 25°C

)
d
= 22 mA, Z
Absolute Maximum
–65 to 00°C
O
+13 dBm
75 mW
= 50 Ω
60 mA
00°C
f = 0.1 GHz
f = 0.1 to 1.5 GHz
f = 0.1 to .5 GHz
f = 0.1 to .5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
[1]
Thermal Resistance
θ
jc
= 130°C/W
Units
mV/°C
dBm
dBm
psec
GHz
dB
dB
dB
V
Min.
1.5
[2,4]
3.6
:
Typ.
±0.6
.0:1
1.6:1
–7.0
13.5
19.0
130
.5
4.5
5.5
4.0
Max.
±1.0
14.5
4.4