MW7IC2240NBR1 Freescale Semiconductor, MW7IC2240NBR1 Datasheet - Page 4

• Manufacturer Part Number: MW7IC2240NBR1
• Description: IC PWR AMP RF 4W TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC2240NBR1

• Current - Supply: 420mA
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 30dB
• P1db: 40W
• Package / Case: TO-272-16
• Rf Type: W-CDMA
• Test Frequency: 2.14GHz
• Voltage - Supply: 32V
• Channel Type: N
• Drain Source Voltage (max): 65V
• Output Power (max): 4W
• Power Gain (typ)@vds: 28dB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Operating Temp Range: -65C to 225C
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
4
Table 5. Electrical Characteristics
Typical W - CDMA Performance — 1800 MHz (In Freescale W - CDMA 1805 - 1880 MHz Test Fixture, 50 ohm system) V
I
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical GSM EDGE Performance — 1800 MHz (In Freescale GSM EDGE 1805 - 1880 MHz Test Fixture, 50 ohm system) V
P
Typical GSM EDGE Performance — 1900 MHz (In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) V
P
Typical CW Performance (In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) V
I
DQ1
DQ2
out
out
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Power Added Efficiency
Input Return Loss
P
out
= 16 W Avg., I
= 16 W Avg., I
= 130 mA, I
= 430 mA, P
@ 1 dB Compression Point
DQ2
out
DQ1
DQ1
= 40 W CW, 1805 - 1880 MHz and 1930 - 1990 MHz
= 330 mA, P
= 90 mA, I
= 90 mA, I
Characteristic
out
DQ2
DQ2
= 4 W Avg., 1805 - 1880 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping,
= 430 mA, 1805 - 1880 MHz EDGE Modulation
= 430 mA, 1930 - 1990 MHz EDGE Modulation
(T
C
= 25°C unless otherwise noted) (continued)
Symbol
ACPR
P1dB
EVM
EVM
PAE
PAE
SR1
SR2
PAE
SR1
SR2
PAE
G
G
G
G
IRL
IRL
ps
ps
ps
ps
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD
= 28 Vdc, I
33.5
16.5
Typ
- 50
- 62
- 77
- 62
- 80
- 15
1.5
1.5
33
35
30
33
31
50
45
- 6
Freescale Semiconductor
DQ1
Max
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 90 mA,
RF Device Data
= 28 Vdc,
DD
DD
= 28 Vdc,
= 28 Vdc,
% rms
% rms
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
%
%
%
%
W