MW7IC18100NR1 Freescale Semiconductor, MW7IC18100NR1 Datasheet - Page 6

• Manufacturer Part Number: MW7IC18100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC18100NR1

• Current - Supply: 1.18A
• Frequency: 1.805GHz ~ 2.05GHz
• Gain: 30dB
• P1db: 51.93dBm
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Test Frequency: 1.9GHz
• Voltage - Supply: 24 ~ 32V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 2.05GHz
• Operating Supply Voltage (min): 24V
• Operating Supply Voltage (typ): 28V
• Operating Supply Voltage (max): 32V
• Package Type: TO-270 WB EP
• Mounting: Surface Mount
• Pin Count: 14
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

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MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
32
31
30
29
28
27
26
25
1
750 mA
1000 mA
V
f = 1960 MHz
500 mA
DD
Figure 7. Two - Tone Power Gain versus
= 28 Vdc, I
Output Power @ I
P
out
DQ1
, OUTPUT POWER (WATTS) CW
= 180 mA
I
DQ2
10
= 1500 mA
Added Efficiency versus Frequency @ P
Figure 5. Power Gain, Input Return Loss and Power Added
Figure 6. Power Gain, Input Return Loss, EVM and Power
33
32
31
30
29
28
27
32
31
30
29
28
27
26
DQ1
Efficiency versus Frequency @ P
1880
1880
TYPICAL CHARACTERISTICS — 1900 MHz
= 180 mA
G
EVM
PAE
PAE
IRL
G
IRL
ps
ps
1250 mA
1900
1900
1920
1920
100
V
I
EDGE Modulation
DQ1
DD
V
I
1940
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
1940
= 28 Vdc, P
DQ1
= 215 mA, I
DD
200
= 28 Vdc, P
= 180 mA, I
1960
1960
out
DQ2
= 40 W Avg.
out
DQ2
= 800 mA
1980
1980
= 100 W CW
= 1000 mA
out
34
33
32
31
30
29
28
27
26
25
1
2000
= 100 Watts CW
2000
out
I
DQ1
135 mA
180 mA
225 mA
= 40 Watts Avg.
90 mA
Figure 8. Two - Tone Power Gain versus
2020
= 270 mA
2020
Output Power @ I
P
out
2040
2040
, OUTPUT POWER (WATTS) CW
55
50
45
40
35
30
25
60
50
40
30
20
10
0
V
f = 1960 MHz
DD
10
= 28 Vdc, I
−5
−10
−15
−20
DQ2
Freescale Semiconductor
−5
−10
−15
−20
DQ2
= 1000 mA
= 1000 mA
RF Device Data
100
200