AMMC-6425-W50 Avago Technologies US Inc., AMMC-6425-W50 Datasheet

IC MMIC 1W POWER AMP 18-28GHZ

AMMC-6425-W50

Manufacturer Part Number
AMMC-6425-W50
Description
IC MMIC 1W POWER AMP 18-28GHZ
Manufacturer
Avago Technologies US Inc.
Type
Power Amplifierr
Datasheet

Specifications of AMMC-6425-W50

Function
Amplifier
Supply Current
900mA
Supply Voltage Range
5V
Frequency Max
28GHz
Frequency Min
18GHz
Supply Voltage Max
7V
Gain
20dB
Number Of Channels
1
Frequency (max)
28GHz
Output Power
28.5@28000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (typ)
5V
Single Supply Voltage (max)
7V
Package Type
Chip
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AMMC-6425-W50
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AMMC - 6425
18 - 28 GHz Power Amplifier
Data Sheet
Description
The AMMC-6425 MMIC is a broadband 1W power
amplifier designed for use in transmitters that operate
in various frequency bands between 18GHz and 28GHz.
This MMIC optimized for linear operation with an output
third order intercept point (OIP3) of 38dBm. At 27GHz it
provides 30dBm of output power (P-1dB) and 20dB of
gain. The device has input and output matching circuitry
for use in 50 Ω environments. The AMMC-6425 also inte-
grates a temperature compensated RF power detection
circuit that enables power detection of 0.3V/W. DC bias is
simple and the device operates on widely available 5V for
current supply (negative voltage only needed for Vg). It is
fabricated in a PHEMT process for exceptional power and
gain performance. For improved reliability and moisture
protection, the die is passivated at the active areas.
AMMC-6425 Absolute Maximum Ratings
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Symbol
V
V
I
P
T
T
T
dq
ch
stg
max
d
in
g
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure
that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices
Parameters/Conditions
Positive Drain Voltage
Gate Supply Voltage
Drain Current
CW Input Power
Operating Channel Temp.
Storage Case Temp.
Maximum Assembly Temp. (60 sec max)
[1]
Chip Size: 2500 x 1750 µm (100 x 69 mils)
Chip Size Tolerance: ± 10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils)
Features
• Wide frequency range: 18 - 28 GHz
• High gain: 20 dB
• Power: @27 GHz, P-1dB=30 dBm
• Highly linear: OIP3=38dBm
• Integrated RF power detector
• 5.0 Volt, -0.6 Volt, 900mA operation
Applications
• Microwave Radio systems
• Satellite VSAT and DBS systems
• LMDS & Pt-Pt mmW Long Haul
• 802.16 & 802.20 WiMax BWA
• WLL and MMDS loops
• Can be driven by AMMC-6345, increasing overall
Units
V
V
mA
dBm
° C
° C
° C
gain.
Min.
-3
-65
Max.
7
0.5
1500
23
+150
+150
+300

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AMMC-6425-W50 Summary of contents

Page 1

... Power: @27 GHz, P-1dB=30 dBm • Highly linear: OIP3=38dBm • Integrated RF power detector • 5.0 Volt, -0.6 Volt, 900mA operation Applications • Microwave Radio systems • Satellite VSAT and DBS systems • LMDS & Pt-Pt mmW Long Haul • 802.16 & 802.20 WiMax BWA • WLL and MMDS loops • Can be driven by AMMC-6345, increasing overall gain. [1] Units dBm ° C ° C ° C Min ...

Page 2

... AMMC-6425 DC Specifications/Physical Properties Symbol Parameters and Test Conditions I Drain Supply Current dq (under any RF power drive and temperature set for Gate Supply Operating Voltage 900 (mA)) d(Q) q [2] Thermal Resistance ch-b (Backside temperature, T Notes: 1. Ambient operational temperature T =25°C unless otherwise noted Channel-to-backside Thermal Resistance (θ at backside temperature ( 25°C calculated from measured data AMMC-6425 RF Specifications (T Symbol Parameters and Test Conditions [4] Gain Small-signal Gain P Output Power at 1dB Gain Compression -1dB P Output Power at 3dB Gain Compression ...

Page 3

... AMMC-6425 Typical Performances (T = 25° NOTE: These measurements are Ω test environment S1[dB] S1[ Frequency [GHz] Figure 1. Typical Gain and Reverse Isolation Frequency [GHz] Figure 4. Typical Noise Figure 0 ~+0C ~-0C ~+8C - -10 -1 -0 - Frequency[GHz] Figure 7. Typical S11 over temperature  =5 900 mA out 0 - -10 -1 -0 - - Frequency [GHz] Figure 2. Typical Return Loss (Input and Output) ...

Page 4

P-1_8deg  P-1_0deg P-1_-0deg  Frequency [GHz] Figure 10. Typical One dB Compression over temperature [1] Typical Scattering Parameters , (T = 25° S11 Freq GHz ...

Page 5

Biasing and Operation The recommended quiescent DC bias condition for optimum efficiency, performance, and reliability is Vd=5 volts with Vg set for Id=900 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range 5.5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg and / the pinch-off voltage Vp. An optional output power detector network is also provided. The differential voltage between ...

Page 6

... DET_R Figure 11. AMMC-6425 Schematic Figure 12. AMMC-6425 Bonding pad locations  V d Three stage 0.W power amplifier DQ DET_O RF out ...

Page 7

... Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0220EN AV02-0884EN - June 5, 2008 Vd 0.1uF DET_O 100pF RF Out 100pF DET_R 0.1uF Note: Red dashed wires - Vg optional wire connected Vg and additional wire connected Vd top and below are OPTIONAL only Ordering Information: AMMC-6425-W10 = 10 devices per tray 0.1 AMMC-6425-W50 = 50 devices per tray 0.01 0.001 25 30 www.avagotech.com ...

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