AMMC-6420-W50 Avago Technologies US Inc., AMMC-6420-W50 Datasheet

IC MMIC 1W POWER AMP 6-18GHZ

AMMC-6420-W50

Manufacturer Part Number
AMMC-6420-W50
Description
IC MMIC 1W POWER AMP 6-18GHZ
Manufacturer
Avago Technologies US Inc.
Type
Power Amplifierr
Datasheet

Specifications of AMMC-6420-W50

Function
Amplifier
Operating Frequency
18000 MHz
Operating Supply Voltage
- 0.4 V
Supply Current
1000 mA
Number Of Channels
1 Channel
Frequency (max)
18GHz
Output Power
29@18000MHzdBm
Power Supply Requirement
Single
Single Supply Voltage (typ)
5.5V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
AMMC - 6420
6 - 18 GHz Power Amplifier
Data Sheet
Description
AMMC-6420 MMIC is a broadband 1W power amplifier
designed for use in frequency bands between 6 to 18GHz.
It is a cost-effective alternative in commercial communi-
cations systems to a discrete FET hybrid. The MMIC has a
partial input and output match to 50Ω but can be easily
externally matched by single element for narrow band
frequency coverage The MMIC is unconditionally stable
over all frequencies and bias conditions. Gate voltage is
set using the Vg pin to optimize for linear or saturated
power amplification. A temperature compensated RF
output power detector circuit allows differential output
power detection of 0.3V/W at 18 GHz. For improved reli-
ability and moisture protection, the die is passivated at
the active areas.
AMMC-6420 Absolute Maximum Ratings
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Symbol
V
V
I
P
T
T
T
d
ch
stg
max
d
in
g
Note: These devices are ESD sensitive. The following precautions are strongly recommended. Ensure that an ESD approved
carrier is used when dice are transported from one destination to another. Personal grounding is to be worn at all times when
handling these devices.
Parameters/Conditions
Positive Drain Voltage
Gate Supply Voltage
Drain Current
CW Input Power
Operating Channel Temp.
Storage Case Temp.
Maximum Assembly Temp (60 sec max)
[1]
Chip Size: 2000 x 2000 µm (78.5 x 78.5 mils)
Chip Size Tolerance: ± 10 µm (±0.4 mils)
Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils)
Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils)
Features
• Wide frequency range: 6 - 18 GHz
• High gain: 20 dB
• Power: @17 GHz, P-2dB=30.5 dBm
• Highly linear: OIP3=38dBm
• Integrated RF power detector
• 5.5 Volt, -0.6 Volt, 800mA operation
Applications
• Microwave Radio systems
• Satellite VSAT and DBS systems
• LMDS & Pt-Pt mmW Long Haul
• 802.16 & 802.20 WiMax BWA
• WLL and MMDS loops
• Can be driven by AMMC-5618 (6-20 GHz) MMIC
Units
V
V
mA
dBm
°C
°C
°C
increasing luding overall gain.
Min.
-3
-65
Max.
7
0.5
1500
23
+150
+150
+300

Related parts for AMMC-6420-W50

AMMC-6420-W50 Summary of contents

Page 1

... Power: @17 GHz, P-2dB=30.5 dBm • Highly linear: OIP3=38dBm • Integrated RF power detector • 5.5 Volt, -0.6 Volt, 800mA operation Applications • Microwave Radio systems • Satellite VSAT and DBS systems • LMDS & Pt-Pt mmW Long Haul • 802.16 & 802.20 WiMax BWA • WLL and MMDS loops • Can be driven by AMMC-5618 (6-20 GHz) MMIC increasing luding overall gain. [1] Units dBm °C °C ° ...

Page 2

... AMMC-6420 DC Specifications/Physical Properties Symbol Parameters and Test Conditions I Drain Supply Current d (under any RF power drive and temperature set for Gate Supply Operating Voltage 800 (mA)) d(Q) q Thermal Resistance [2] ch-b (Backside temperature, T Notes: 1. Ambient operational temperature T =25°C unless otherwise noted Channel-to-backside Thermal Resistance (θ tance at backside temperature ( 25°C calculated from measured data AMMC-6420 RF Specifications (T Symbol Parameters and Test Conditions [4] Gain Small-signal Gain P Output Power at 1dB -1dB Gain Compression ...

Page 3

... AMMC-6420 Typical Performances (T = 25° NOTE: These measurements are Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or power matching S1[dB]  S1[dB Frequency [GHz] Figure 1. Typical Gain and Reverse Isolation Frequency [GHz] Figure 4. Typical Noise Figure 0 - -10 -1 -0 S11_0 S11_-0 S11_8 - Frequency [GHz] Figure 7 ...

Page 4

P-_8deg  P-_0deg P-_-0deg  Frequency [GHz] Figure 10. Typical P-2 over temperature [1] Typical Scattering Parameters , (T = 25° S11 Freq GHz dB Mag Phase 1 -0.85 ...

Page 5

Biasing and Operation The recommended quiescent DC bias condition for optimum efficiency, performance, and reliability is Vd=5.5 volts with Vg set for Id=800 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range 5.5V. A single DC gate supply connected to Vg will bias all gain stages. Muting can be accomplished by setting Vg to the pinch-off voltage Vp (-1.0V). An optional output power detector network is also provided. The differential voltage between the Det-Ref ...

Page 6

... Figure 11. AMMC-6420 Schematic RF in Figure 12. AMMC-6420 Bonding pad locations  DET DET out RF out ...

Page 7

... Figure 13. AMMC-6420 Assembly diagram 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0. Pout[dBm] Figure 14. AMMC-6420 Typical Detector Voltage and Output Power, Freq=12GHz  DET _ O RFOutput RFO DET Notes: =>1mF capacitors on DC biasing lines not 1. shown required. Vg connections recommended on both 2. sides for devices operating at or above 1 condition ...

Page 8

... Ordering Information: AMMC-6420-W10 = 10 devices per tray AMMC-6420-W50 = 50 devices per tray For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies. All rights reserved. Obsoletes AV01-0219EN AV02-1370EN - September 4, 2008 www ...

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