OM7614/BGM1011 NXP Semiconductors, OM7614/BGM1011 Datasheet - Page 4

• Manufacturer Part Number: OM7614/BGM1011
• Description: EVAL BOARD FOR BGM1011
• Manufacturer: NXP Semiconductors
• Type: Amplifierr

Specifications of OM7614/BGM1011

• Frequency: 0Hz ~ 4GHz
• For Use With/related Products: BGM1011
• Lead Free Status / RoHS Status: Not applicable / Not applicable
• Other names: 568-4096

Philips Semiconductors
APPLICATION INFORMATION
Figure 2 shows a typical application circuit for the BGM1011 MMIC. The device is internally matched to 50 Ω, and
therefore does not need any external matching. The value of the input and output DC blocking capacitors C1, C2 should
be not more than 100 pF for applications above 100 MHz. Their values can be used to fine tune the input and output
impedance. However, when the device is operated below 100 MHz, the capacitor value should be increased.
The nominal value of the RF choke, L1 is 100 nH. At frequencies below 100 MHz this value should be increased to
200 nH. At frequencies between 1 and 3 GHz a much lower value must be used (e.g. 18 nH) to improve return losses.
For optimal results, a good quality chip inductor such as the TDK MLG 1608 (0603), or a wire-wound SMD type should
be chosen.
Capacitor, C4 and resistor, R1 are added for optimal supply decoupling.
Both the RF choke, L1 and the 22 nF supply decoupling capacitor, C3 should be located as closely as possible to the
MMIC.
Separate paths must be used for the ground planes of the ground pins GND1, GND2, and these paths must be as short
as possible. When using vias, use multiple vias per pin in order to limit ground path inductance.
List of components used for the typical application; an amplifier for LNB IF output.
2002 Jan 14
C1, C2
C3
C4
R1
L1
COMPONENT
MMIC wideband amplifier
Fig.2 Typical application circuit
RF in
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD resistor
SMD inductor
C
1
6 [In]
DESCRIPTION
4 [GND1]
Fig.2 Typical application circuit
1 [Vs]
BGM1011
SOT363
2,5 [GND2]
4
100 pF
22 nF
5.6 pF
10 to 200 nH
10 Ω
3 [Out]
C
R
4
1
VALUE
C
3
L
1
Vs
C
2
RF out
Preliminary specification
0603
0603
0603
0603
0603
DIMENSIONS.
BGM1011