CGH40120F-TB Cree Inc, CGH40120F-TB Datasheet - Page 2

• Manufacturer Part Number: CGH40120F-TB
• Description: BOARD DEMO AMP CIRCUIT CGH40120
• Manufacturer: Cree Inc
• Type: HEMTr

Specifications of CGH40120F-TB

• Mfg Application Notes: Thermal Performance Guide
• Frequency: 0Hz ~ 4GHz
• For Use With/related Products: CGH40120F
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Note:
1
2
3
Electrical Characteristics (T
Notes:
1
2
3
4
5
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics
Small Signal Gain
Power Output
Drain Efficiency
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
2
Refer to the Application Note on soldering at
Measured for the CGH40120F at P
See also, the Power Dissipation De-rating Curve on Page 7.
Measured on wafer prior to packaging.
Scaled from PCM data.
P
Drain Efficiency = P
Measured in CGH40120F-TB.
SAT
is defined as I
CGH40120F Rev 2.2
4
5
3
1
(T
1
G
2
C
= 25
OUT
= 2.8 mA.
2,3
/ P
˚
C, F
DC
0
2
= 1.3 GHz unless otherwise noted)
Symbol
VSWR
V
V
P
V
G
C
C
C
GS(th)
GS(Q)
I
DISS
DS
SAT
η
GD
BR
SS
GS
DS
C
= 112 W.
= 25˚C)
Min.
23.2
17.5
-3.8
120
100
Symbol
55
www.cree.com/products/wireless_appnotes.asp
–
–
–
–
–
I
V
T
V
R
GMAX
T
T
T
STG
τ
DSS
θJC
GS
J
S
C
Typ.
28.0
35.3
-3.3
-3.0
120
9.1
1.6
19
70
–
–
10 : 1
Max.
-2.3
–
–
–
–
–
–
–
–
–
-65, +150
-40, +150
-10, +2
Rating
225
245
1.5
84
30
80
Units
V
V
V
dB
%
pF
pF
pF
W
Y
A
DC
DC
DC
Conditions
V
V
V
V
V
V
V
No damage at all phase angles,
V
P
V
V
V
OUT
DS
DS
DS
GS
DD
DD
DD
DD
DS
DS
DS
= 10 V, I
= 28 V, I
= 6.0 V, V
= -8 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, I
= 28 V, V
= 28 V, V
= 28 V, V
= 100 W CW
D
D
D
DQ
DQ
DQ
DQ
gs
gs
gs
GS
= 28.8 mA
= 28.8 mA
= 1.0 A
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= -8 V, f = 1 MHz
= 1.0 A
= 1.0 A
= 1.0 A, P
= 1.0 A,
= 2.0 V
USA Tel: [phone]
Units
˚C/W
in-oz
Volts
Volts
www.cree.com/wireless
mA
Fax: [phone]
˚C
˚C
˚C
˚C
Durham, NC 27703
OUT
4600 Silicon Drive
= P
SAT
Cree, Inc.