SI4731-B-EVB Silicon Laboratories Inc, SI4731-B-EVB Datasheet - Page 4

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SI4731-B-EVB

Manufacturer Part Number
SI4731-B-EVB
Description
DEVELOPMENT KIT SI4731
Manufacturer
Silicon Laboratories Inc
Type
Receiverr
Datasheet

Specifications of SI4731-B-EVB

Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
Si4730, Si4731
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Other names
Q3885405
Si4730/31-A10
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Supply Voltage
Interface Supply Voltage
Power Supply Power-Up Rise Time
Interface Power Supply Power-Up Rise Time
Ambient Temperature
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Supply Voltage
Interface Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The Si4730/31 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
3. For input pins SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, and GPO3.
4. At RF input pins, FMI and AMI.
Typical values apply at VDD = 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
3
3
Parameter
4
Parameter
1,2
Symbol
T
V
Symbol
V
V
T
V
V
I
STG
DDRISE
OP
IORISE
DD
IN
V
IO
IN
V
Rev. 1.0
T
DD
IO
A
Test Condition
–0.3 to (VIO + 0.3)
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
Min
–20
2.7
1.5
10
10
Typ
25
Max
5.5
3.6
85
Unit
V
mA
°C
°C
V
V
V
pK
Unit
µs
µs
°C
V
V

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