112MT160KB Vishay, 112MT160KB Datasheet - Page 2

• Manufacturer Part Number: 112MT160KB
• Description: RECT BRIDGE 1600V 110A INT-A-PAK
• Manufacturer: Vishay

Specifications of 112MT160KB

• Voltage - Peak Reverse (max): 1600V
• Current - Dc Forward (if): 110A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (6 + 8)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Other names: *112MT160KB; VS-112MT160KB; VS-112MT160KB; VS112MT160KB; VS112MT160KB

Document Number: 93557
53-93-113MT..KB Series
Bulletin I27503 08/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Forward Conduction
Type number
53/52/51MT..KB
93/92/91MT..KB
113/112/111MT..KB
I
I
I
I
V
V
r
r
V
di/dt
I
I
TSM
2
H
L
O
2
t1
t2
t
T(TO)1
T(TO)2
TM
t
Max. non-repetitive rate
Parameter
Maximum DC output current
@ Case temperature
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum on-state voltage drop
of rise of turned on current
Max. holding current
Max. latching current
2
2
t for fusing
t for fusing
Voltage
Code
120
100
120
100
140
160
140
160
80
80
V
reverse voltage
repetitive peak
RRM
53MT.KB 93MT.KB 113MT.KB
52MT.KB 92MT.KB 112MT.KB Units Conditions
51MT.KB 91MT.KB 111MT.KB
12.40
11.04
7700
1.17
1.45
2.68
390
410
330
345
770
700
540
500
55
85
, maximum
1200
1000
1200
1000
1400
1600
1400
1600
800
800
V
45250
1000
4525
4130
3200
2920
1.09
1.27
4.10
3.59
1.65
950
800
840
150
200
400
90
85
non-repetitive peak
V
reverse voltage
RSM
63800
1130
1180
1000
6380
5830
4510
4120
1.04
1.27
3.93
3.37
1.57
110
950
, maximum
85
1300
1100
1300
1100
1500
1700
1500
1700
900
900
V
A
A/µs
m
A
mA
°C
A
A
2
V
V
2
s
s
120° Rect conduction angle
t = 10ms
t = 8.3ms reapplied
t = 10ms
t = 8.3ms reapplied
t = 10ms
t = 8.3ms reapplied
t = 10ms
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
(I >
(16.7% x
(I >
I
t
T
I
T
resistive load, gate open circuit
T
peak off-state voltage
V
pk
p
g
J
J
J
DRM
= 400µs single junction
= 500mA, t
= 25
= 25
= 150A, T
= 25
gate open circuit
, max. repetitive I
x I
x I
o
o
o
C, anode supply = 6V,
C, anode supply = 6V, resistive load
C, from 0.67 V
T (AV)
T (AV)
1200
1000
1200
1400
1600
1000
1400
1600
800
800
x I
x I
V
No voltage
100% V
No voltage
100% V
J
r
T(AV)
), @ T
T (AV)
), @ T
< 0.5 µs, t
= 25°C
< I <
< I <
J
J
RRM
RRM
max.
max.
DRM
p
www.vishay.com
> 6 µs
x I
x I
, I
T(AV)
T (AV)
RRM
@ T
TM
T
J
), @ T
), @ T
=
/I
= T
J
Initial
DRM
mA
= 125°C
10
20
J
x I
J
J
max.
max.
max.
max.
T(AV)
,
2