113MT120KB Vishay, 113MT120KB Datasheet - Page 9

• Manufacturer Part Number: 113MT120KB
• Description: RECT BRIDGE 1200V 110A INT-A-PAK
• Manufacturer: Vishay

Specifications of 113MT120KB

• Voltage - Peak Reverse (max): 1200V
• Current - Dc Forward (if): 110A
• Diode Type: Three Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (6 + 6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Other names: *113MT120KB

Document Number: 93557
0.001
0.01
100
0.1
0.1
10
10
0.001
0.001
1
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Steady State Value
R
R
R
(DC Operation)
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 µs, tp >= 6 µs
thJC
thJC
thJC
VGD
= 1.07 K/W
= 0.86 K/W
= 0.70 K/W
IGD
0.01
Fig. 16 - Thermal Impedance Z
0.01
Square Wave Pulse Duration (s)
0.1
Instantaneous Gate Current (A)
53/ 93/ 113MT..KB Series
Fig. 17 - Gate Characteristics
(b)
(a)
93MT..KB Series
0.1
1
thJC
Per Junction
Characteristics
Frequency Limited by PG(AV)
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
10
53MT..KB Series
(4) (3)
1
53-93-113MT..KB Series
113MT..KB Series
(2) (1)
100
Bulletin I27503 08/97
1000
10
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