APT2X100DQ120J Microsemi Power Products Group, APT2X100DQ120J Datasheet - Page 2

DIODE DUAL 100A 1200V SOT-227

APT2X100DQ120J

Manufacturer Part Number
APT2X100DQ120J
Description
DIODE DUAL 100A 1200V SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT2X100DQ120J

Voltage - Forward (vf) (max) @ If
3V @ 100A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Current - Average Rectified (io) (per Diode)
100A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
385ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT2X100DQ120JMI
APT2X100DQ120JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT2X100DQ120J
Quantity:
170
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Symbol
V
Torque
I
I
I
Isolation
R
RRM
RRM
RRM
Q
Q
Q
W
t
t
t
t
θJC
rr
rr
rr
rr
rr
rr
rr
T
0.35
0.30
0.25
0.20
0.15
0.10
0.05
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage
Package Weight
Maximum Mounting Torque
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
0
10
-5
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
D = 0.9
Dissipated Power
0.7
0.5
0.3
0.1
0.05
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
(Watts)
10
-4
I
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
F
= 1A, di
T
J
(°C)
RECTANGULAR PULSE DURATION (seconds)
SINGLE PULSE
0.00101
F
0.0308
/dt = -100A/µs, V
10
-3
I
I
I
F
F
F
0.0299
= 100A, di
V
V
0.0693
= 100A, di
= 100A, di
V
R
R
R
= 800V, T
= 800V, T
Test Conditions
= 800V, T
R
0.309
= 30V, T
F
0.219
F
F
/dt = -1000A/µs
/dt = -200A/µs
/dt = -200A/µs
T
C
C
10
C
C
= 125°C
= 125°C
-2
(°C)
= 25°C
J
= 25°C
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
Note:
2500
MIN
Peak T J = P DM x Z θJC + T C
MIN
-
-
-
-
-
-
-
-
-
-
Duty Factor D =
10
-1
t 1
1055
5240
9345
TYP
385
480
210
1.03
29.2
t 2
TYP
45
19
70
6
t 1
/
t 2
MAX
MAX
.32
1.1
10
-
-
1.0
Amps
Amps
Amps
UNIT
UNIT
°C/W
Volts
lb•in
N•m
nC
nC
nC
ns
ns
ns
oz
g

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