DSS2X101-02A IXYS, DSS2X101-02A Datasheet - Page 2

• Manufacturer Part Number: DSS2X101-02A
• Description: DIODE SCHTKY 200V 2X100A SOT227B
• Manufacturer: IXYS

Specifications of DSS2X101-02A

• Voltage - Forward (vf) (max) @ If: 940mV @ 100A
• Current - Reverse Leakage @ Vr: 4mA @ 200V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 200V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vrrm, (v): 200
• Ifavm, D = 0.5, Total, (a): 200
• Ifavm, D = 0.5, Per Diode, (a): 100
• @ Tc, (°c): 105
• Vf, Max, Tvj =125°c, (v): 0.84
• @ If, (a): 100
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.40
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Z
IXYS reserves the right to change limits, Conditions and dimensions.
© 2007 IXYS All rights reserved
I
I
1000
F
F(AV)
thJC
0.01
K/W
100
160
120
0.1
A
10
80
40
A
0.001
1
1
0
0.2
0
Fig. 1 Max. forward voltage
Fig. 4 Average forward current I
D =
0.5
Fig. 6 Transient thermal impedance junction to case at various duty cycles
0.33
0.25
0.08
0.17
0.4
40
drop characteristics
versus case temperature T
0.6
d = 0.5
80
T
150°C
125°C
25°C
VJ
0.01
0.8
=
T
C
V
120
F
1.0
DC
Single Pulse
C
V
F(AV)
C
0.1
P
I
0.001
R
(AV)
0.01
140
120
100
mA
0.1
10
80
60
40
20
W
1
0
0
0
Fig. 2 Typ. reverse current I
Fig. 5 Forward power loss
T
100°C
125°C
50°C
75°C
25°C
VJ
=150°C
50
vs. reverse voltage V
characteristics
50
1
100
t
I
F(AV)
100
150
V
R
DSS 2x101-02A
d =
DC
0.5
0.33
0.25
0.17
0.08
s
R
R
A
10
V
10000
C
1000
T
100
pF
0
Fig. 3 Typ. junction capacitance C
Note: All curves are per diode
T
DSS 2x101-02A
VJ
= 25°C
50
versus reverse voltage V
100
V
150
R
2 - 2
V
R
T