STPS24045TV STMicroelectronics, STPS24045TV Datasheet - Page 2

• Manufacturer Part Number: STPS24045TV
• Description: DIODE SCHOTTKY 45V 120A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STPS24045TV

• Voltage - Forward (vf) (max) @ If: 670mV @ 120A
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Current - Average Rectified (io) (per Diode): 120A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 120 A
• Max Surge Current: 1500 A
• Configuration: Dual Parallel
• Forward Voltage Drop: 0.91 V @ 240 A
• Maximum Reverse Leakage Current: 2000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Screw
• Capacitance, Junction: 45 pF
• Current, Forward: 240 A
• Current, Reverse: 2 A
• Current, Surge: 1500 A
• Package Type: ISOTOP
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.28 °C/W
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +150 °C
• Voltage, Forward: 0.91 V
• Voltage, Reverse: 45 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5399-5; STPS24045TV

STPS24045TV
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.47 x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 3: Normalized avalanche power derating
versus pulse duration.
2/4
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
110
100
0.001
0.01
Symbol
90
80
70
60
50
40
30
20
10
Symbol
0.1
R
Tj(diode 1) = P(diode) x R
0
R
0.01
1
V
0
th (j-c)
I
PF(av)(W)
th (c)
P
R
F
P
ARM
ARM p
*
*
(1µs)
20
(t )
F(AV)
0.1
Junction to case
= 0.05
* tp = 5 ms, < 2%
** tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
40
+ 0.00167 x I
= 0.1
Parameter
1
60
IF(av) (A)
t (µs)
p
= 0.2
th(j-c)
80
F
10
2
(RMS)
(Per diode) + P(diode 2) x R
100
= 0.5
Parameter
100
=tp/T
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
120
T
= 1
Tests Conditions
tp
1000
140
Fig. 2: Average forward current versus ambient
temperature ( = 0.5, per diode).
140
120
100
Fig. 4: Normalized avalanche power derating
versus junction temperature.
1.2
0.8
0.6
0.4
0.2
80
60
40
20
1
0
V
I
I
I
0
F
F
F
0
P
0
R
IF(av)(A)
ARM
P
= 240 A
= 240 A
= 120 A
ARM p
= V
th(c)
(25°C)
Rth(j-a)=5°C/W
(t )
RRM
Per diode
Total
Coupling
25
25
Rth(j-a)=Rth(j-c)
Rth(j-a)=2°C/W
50
50
Min.
Tamb(°C)
T (°C)
j
75
75
Typ.
0.72
0.52
Value
0.65
0.28
0.10
100
100
Max.
0.91
0.87
0.67
300
2
=tp/T
125
125
T
Unit
Unit
C/W
mA
V
tp
150
150