STTA9012TV2 STMicroelectronics, STTA9012TV2 Datasheet

DIODE TURBOSWITCH 1200V ISOTOP

STTA9012TV2

Manufacturer Part Number
STTA9012TV2
Description
DIODE TURBOSWITCH 1200V ISOTOP
Manufacturer
STMicroelectronics
Series
TURBOSWITCH™r
Datasheet

Specifications of STTA9012TV2

Voltage - Forward (vf) (max) @ If
2.05V @ 45A
Current - Reverse Leakage @ Vr
200µA @ 960V
Current - Average Rectified (io) (per Diode)
45A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
115ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
497-3746-5

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MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all "freewheel
mode" operations.
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
CURRENT OPERATION.
Electrical insulation : 2500V
Capacitance : < 45pF.
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
HIGH FREQUENCY AND/OR HIGH PULSED
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE :
Symbol
I
V
V
F(RMS)
I
I
T
FRM
FSM
RRM
RSM
T
stg
j
TURBOSWITCH
V
t
F
rr
V
I
F(AV)
(max)
®
RRM
(typ)
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
RMS
2 x 45A
1200V
1.85V
65ns
TM
ULTRA-FAST HIGH VOLTAGE DIODE
Parameter
tp = 5 s F = 5kHz square
tp = 10ms sinusoidal
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
STTA9012TV1
K2
K1
A2
A1
STTA9012TV1/2
ISOTOP
- 65 to + 150
TM
STTA9012TV2
Value
1200
1200
150
700
420
150
A2
K2
K1
A1
Unit
°C
°C
V
V
A
A
A
1/8

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STTA9012TV2 Summary of contents

Page 1

... They are particularly suitable in motor control circuitries the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. Parameter 5kHz square tp = 10ms sinusoidal STTA9012TV1 STTA9012TV2 TM ISOTOP Value Unit 1200 1200 150 700 420 - 150 °C 150 °C V ...

Page 2

STTA9012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Parameter R Junction to case thermal resistance th(j-c) P Conduction power dissipation 1 P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS (per diode) ...

Page 3

Fig. 1: Conduction losses versus average current (per diode). P1(W) 100 = 0 IF(av) ( Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration ...

Page 4

STTA9012TV1/2 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj=125°C). 1.1 S factor 1.0 0.9 IRM 0.8 0.7 Tj(° Fig. 9: Forward recovery time versus dI confidence, per diode). tfr(ns) 1000 900 VFR=1.1*VF max. ...

Page 5

APPLICATION DATA The 1200V TURBOSWITCH designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given below : CONDUCTION ...

Page 6

STTA9012TV1/2 Fig SNUBBER DIODE. PWM 1/T = t/T Fig RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS ...

Page 7

APPLICATION DATA (Cont’d) Fig. F: TURN-OFF CHARACTERISTICS V TRANSISTOR / / trr = / /dt ...

Page 8

... STTA9012TV1 STTA9012TV1 STTA9012TV2 STTA9012TV2 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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