APT200GN60JDQ4 Microsemi Power Products Group, APT200GN60JDQ4 Datasheet - Page 4

• Manufacturer Part Number: APT200GN60JDQ4
• Description: IGBT 600V 283A 682W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT200GN60JDQ4

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 200A
• Current - Collector (ic) (max): 283A
• Current - Collector Cutoff (max): 50µA
• Input Capacitance (cies) @ Vce: 14.1nF @ 25V
• Power - Max: 682W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT200GN60JDQ4MI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
35,000
30,000
25,000
20,000
15,000
10,000
70,000
60,000
50,000
40,000
30,000
20,000
10,000
5,000
FIGURE 13, Turn-On Energy Loss vs Collector Current
180
160
140
120
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
60
50
40
30
20
10
80
60
40
20
0
0
0
0
I
I
CE
CE
I
CE
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
= 25°C
= 1.0Ω
= 400V
R
G
, GATE RESISTANCE (OHMS)
,
or 125°C
V
GE
= 15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
25,000
20,000
15,000
10,000
35,000
30,000
25,000
20,000
15,000
10,000
5,000
FIGURE 14, Turn Off Energy Loss vs Collector Current
5,000
FIGURE 10, Turn-Off Delay Time vs Collector Current
800
700
600
500
400
300
200
100
250
200
150
100
FIGURE 12, Current Fall Time vs Collector Current
50
0
0
0
0
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
=
T
V
=
J
1.0Ω
GE
, JUNCTION TEMPERATURE (°C)
400V
=15V,T
J
=125°C
T
J
=
V
GE
125°C, V
=15V,T
GE
J
=25°C
=
15V