IXSN52N60AU1 IXYS, IXSN52N60AU1 Datasheet
IXSN52N60AU1
Specifications of IXSN52N60AU1
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IXSN52N60AU1 Summary of contents
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... 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSN 52N60AU1 2 4 Maximum Ratings 600 = 1 MW 600 GE ±20 ± 160 = 0.8 V CES = 125° 250 2500 3000 -55 ...
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... A/ 125°C 175 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSN52N60AU1 miniBLOC, SOT-227 B max 250 nC M4 screws (4x) supplied 60 nC Dim. Millimeter Min. Max. 120 nC A 31.50 31 ...
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... 125° Volts GE © 2000 IXYS All rights reserved 13V 11V 80A 40° IXSN52N60AU1 Fig.2 Output Characterstics 200 T = 25°C J 180 160 140 120 100 Volts CE Fig.4 Temperature Dependence of Output Saturation Voltage 1.5 V =15V GE 1 80A C 1.3 1.2 1.1 ...
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... IXYS All rights reserved 12 1000 9 E off 1000 0.01 200 250 Diode IGBT 0.001 0.01 Time - Seconds IXSN52N60AU1 Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time 125° 52A E C off 800 600 400 t fi 200 Ohms G Fig ...
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... Fig. 15. Dynamic parameters versus junction temperature. Fig. 18 Transient thermal impedance junction to case. © 2000 IXYS All rights reserved Fig. 13 Recovery charge versus -di /dt. F Fig. 16 Recovery time versus -di /dt. F IXSN52N60AU1 Fig. 14 Peak reverse current versus -di /dt. F Fig. 17 Peak forward voltage vs. di /dt ...