MWI75-06A7T IXYS, MWI75-06A7T Datasheet - Page 4

• Manufacturer Part Number: MWI75-06A7T
• Description: MOD IGBT SIXPACK RBSOA 600V E2
• Manufacturer: IXYS

Specifications of MWI75-06A7T

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 75A
• Current - Collector (ic) (max): 90A
• Current - Collector Cutoff (max): 1.3mA
• Input Capacitance (cies) @ Vce: 3.2nF @ 25V
• Power - Max: 280W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 90A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 18
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 90
• Ic80, Tc = 80°c, Igbt, (a): 60
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 2.5
• Rthjc, Max, Igbt, (k/w): 0.44
• If25, Tc = 25°c, Diode, (a): 140
• If80, Tc = 80°c, Diode, (a): 85
• Package Style: E2-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
10.0
160
120
7.5
5.0
2.5
0.0
mJ
mJ
80
40
10
A
8
6
4
2
0
0
0
0
0
E
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
on
R
T
VJ
G
= 18 Ω
100
= 125°C
10
E
times versus collector current
times versus gate resistor
RBSOA
on
40
200
20
300
80
30
400
t
d(on)
t
r
R
40
I
G
C
500
120
V
V
I
T
V
V
R
T
C
VJ
VJ
CE
GE
CE
GE
G
V
= 300V
= ±15V
= 18Ω
= 75A
= 300V
= ±15V
= 125°C
50
= 125°C
CE
600
A
t
Ω
d(on)
t
160
r
700
60
100
75
50
25
0
100
80
60
40
20
0
ns
ns
V
t
t
Z
E
0.0001
thJC
off
E
0.001
0.01
off
K/W
0.1
mJ
0.00001 0.0001 0.001
mJ
5
4
3
2
1
0
5
4
3
2
1
0
1
0
0
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
10
times versus collector current
times versus gate resistor
40
20
single pulse
0.01
80
30
MWI 75-06 A7
MWI 75-06 A7 T
R
0.1
40
G
I
V
V
R
T
C
120
t
CE
GE
VJ
G
V
V
I
T
C
VJ
CE
GE
= 300V
= 18Ω
= ±15V
= 125°C
= 300V
= ±15V
= 75A
A
= 125°C
50
1
t
E
t
d(off)
f
MWI7506A7
E
off
diode
IGBT
Ω
t
s
off
d(off)
t
f
160
60
10
20070912a
500
ns
400
300
200
100
0
500
400
300
200
100
0
ns
4 - 4
t
t