MWI50-12A7T IXYS, MWI50-12A7T Datasheet
MWI50-12A7T
Specifications of MWI50-12A7T
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MWI50-12A7T Summary of contents
Page 1
... A d(off Ω = ± off MHz ies 600V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° 100 VJ CM ≤ CEK CES = 22 Ω 125°C ...
Page 2
... R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 110 70 Characteristic Values min. typ. = 25°C 2 125°C 1 125° ...
Page 3
... J A 150 120 Fig. 4 Typ. forward characteristics of free wheeling diode 120 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode V =17V GE 15V 13V 11V 9V 3 25° 300 200 = 125°C J 100 = 600V R = 50A MWI50-12A7 0 800 1000 A/μs 20070912a ...
Page 4
... IGBT single pulse 0.00001 0.0001 0.001 0.01 t Fig. 12 Typ. transient thermal impedance 600 ns E off 500 t d(off) t 400 300 V = 600V ±15V GE 200 R = 22Ω 125°C J 100 100 A 1500 t d(off) ns 1200 E off t 900 600 300 Ω MWI50-12A7 0 20070912a ...