MUBW100-06A8 IXYS, MUBW100-06A8 Datasheet - Page 2

• Manufacturer Part Number: MUBW100-06A8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW100-06A8

• Configuration: Three Phase Inverter with Brake
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 1.4mA
• Input Capacitance (cies) @ Vce: 4.3nF @ 25V
• Power - Max: 410W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Channel Type: N
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 125A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 24
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 180
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.73
• Vces, Inv 3 - Ph., (v): 600
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 125
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 85
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.9
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.30
• Vces, Br Chopper, (v): 600
• Ic80, Tc = 80°c, Br Chopper, (a): 50
• Rthjc, Typ, Br Chopper, (k/w): 0.55
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
V
V
I
I
RBSOA
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
Symbol
I
I
Symbol
V
I
t
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
Output Inverter T1 - T6
C25
C80
CES
GES
Output Inverter D1 - D6
F25
F80
RM
SC
d(on)
r
d(off)
f
rr
CES
GES
tot
CE(sat)
GE(th)
on
off
F
ies
thJC
thJC
Gon
Conditions
T
Continuous
T
T
V
Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
(per IGBT)
Conditions
T
T
Conditions
I
I
V
(per diode)
C
C
F
F
VJ
C
C
C
C
C
GE
CE
CE
CE
CE
CE
R
= 100 A; V
= 1.5 mA; V
= 60 A; di
= 100 A; V
= 25°C
= 80°C
= 25°C
= 25°C
= 80°C
Inductive load, T
V
V
= 300 V; V
= 300V; V
= 25°C to 150°C
= V
= V
= ± 15 V; R
= 0 V; V
= 25 V; V
CE
GE
CES
CES
= 300 V; I
= ± 15 V; R
; V
; V
F
GE
GE
GE
/dt = -500 A/µs; T
GE
GE
GE
GE
GE
GE
= ± 20 V
G
= 0 V; T
= ± 15 V; R
= 0 V; T
= 15 V; T
= 0 V; f = 1 MHz
= 15 V; I
= 0 V
= 2.2 Ω; T
= V
C
G
= 100 A
= 2.2 Ω
VJ
CE
T
T
T
= 125°C
VJ
VJ
VJ
VJ
VJ
C
VJ
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
G
= 125 A
VJ
= 25°C
= 2.2 Ω; T
= 125°C
(T
VJ
VJ
= 125°C
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
min.
4.5
I
Characteristic Values
Characteristic Values
CM
V
CEK
Maximum Ratings
=
Maximum Ratings
150
340
100
typ.
typ.
≤ V
1.9
2.2
1.5
1.0
2.9
4.3
1.9
1.4
25
11
30
28
± 20
600
125
200
410
140
CES
85
10
85
max.
max.
0.61 K/W
400
2.5
6.5
1.4 mA
0.3 K/W
2.2
mA
µs
mJ
mJ
W
nC
nA
nF
ns
ns
ns
ns
ns
V
V
A
A
A
A
A
V
V
V
V
V
A
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
T1-T6
T7
Diode (typ. at T
D1-D6
D7
D11-D16
Thermal Response
IGBT (typ.)
T1-T6
T7
Diode (typ.)
D1-D6
D7
D11-D16
MUBW 100-06 A8
C
C
C
C
C
C
C
C
C
C
th1
th2
th1
th2
th1
th2
th1
th2
th1
th2
V
V
V
= 0.232 J/K; R
= 1.504 J/K; R
= 0.123 J/K; R
= 0.944 J/K; R
= 0.112 J/K; R
= 0.745 J/K; R
V
= 0.138 J/K; R
= 0.957 J/K; R
= 0.038 J/K; R
= 0.435 J/K; R
0
0
0
V
0
= 1.05 V; R
= 1.05 V; R
= 1.15 V; R
0
= 1.15 V; R
= 0.85 V; R
GE
J
= 125°C)
= 15 V; T
0
0
0
0
th1
th2
th1
th2
th1
th2
th1
th2
th1
th2
= 11.5 m Ω
= 21.5 m Ω
= 12.5 m Ω
0
= 2.5 m Ω
= 4 m Ω
= 0.223 K/W
= 0.077 K/W
= 0.419 K/W
= 0.131 K/W
= 0.568 K/W
= 0.162 K/W
= 0.48 K/W
= 0.13 K/W
= 1.74 K/W
= 0.36 K/W
J
= 125°C)
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