MUBW75-17T8 IXYS, MUBW75-17T8 Datasheet - Page 7

• Manufacturer Part Number: MUBW75-17T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW75-17T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 75A
• Current - Collector (ic) (max): 113A
• Current - Collector Cutoff (max): 800µA
• Input Capacitance (cies) @ Vce: 6.6nF @ 25V
• Power - Max: 450W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 2200
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 155
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 0.95
• Vces, Inv 3 - Ph., (v): 1700
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 113
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 80
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 2.0
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.28
• Vces, Br Chopper, (v): 1700
• Ic80, Tc = 80°c, Br Chopper, (a): 34
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
[µC]
[Ω]
Output Inverter T1 - T6 / D1 - D6
[mJ]
Q
R
E
rr
10000
1000
100
60
50
40
30
20
10
40
30
20
10
0
0
0
0
0
Fig. 13 Typ. turn on energy & switching times
Fig. 15 Typical turn-off characteristics
Fig. 17
V
V
R
T
VJ
V
V
R
T
CE
GE
G
VJ
CE
GE
G
=
= 900 V
= ±15 V
= 125°C
25
=
= 900 V
= ±15 V
= 125°C
Typ. transient thermal impedance
30
30
versus collector current
18 Ω
of free wheeling diode
Temperature Sensor NTC
18 Ω
50
60
60
I
C
T [°C]
I
, I
F
75
F
[A]
[A]
90
90
100
120
120
125
E
E
E
on
rec
off
150
150
150
[K/W]
Z
thJC
[mJ]
E
0.5
0.4
0.3
0.2
0.1
0.0
40
30
20
10
0
1
0
Fig. 14 Typ. turn off energy and switching times
Fig. 16 Transient thermal impedance
1
2
3
4
V
V
T
I
single pulse
C
VJ
CE
GE
,I
F
= 900 V
= ±15 V
= 125°C
0.0175
0.0860
0.0920
0.0832
= 75 A
R
10
versus collector current
junction to case
i
10
IGBT
R
C
0.0015
0.0276
0.1311
0.6329
20
MUBW 75-17 T8
t
R
t [ms]
i
G
100
[Ω]
C
R
30
0.0265
0.1443
0.1655
0.0636
1000
R
i
R
C
40
Diode
E
E
E
diode
IGBT
on
rec
0.0020
0.0318
0.1618
0.8218
off
20090826a
10000
t
50
i
7 - 8