CM150TL-24NF Powerex Inc, CM150TL-24NF Datasheet - Page 3

• Manufacturer Part Number: CM150TL-24NF
• Description: IGBT MOD 6PAC 1200V 150A NF SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of CM150TL-24NF

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 23nF @ 10V
• Power - Max: 890W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Voltage: 1200V
• Current: 150A
• Circuit Configuration: 6-Pac
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504
• Recommended Dc To Dc Converter: VLA106-15242 or VLA106-24242
• Interface Circuit Ref Design: BG2B-3015 x3
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

CM150TL-24NF
Six IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case*
Thermal Resistance, Junction to Case*
Contact Thermal Resistance
External Gate Resistance
*4 T
01/10 rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
300
200
100
10
10
10
C
0
, T
3
2
1
0
0
f
EMITTER-COLLECTOR VOLTAGE, V
COLLECTOR-EMITTER VOLTAGE, V
measured point is just under the chips.
FORWARD CHARACTERISTICS
OUTPUT CHARACTERISTICS
1
T
T
2
j
j
= 25°C
= 125°C
FREE-WHEEL DIODE
(TYPICAL)
(TYPICAL)
V
2
15
4
13
GE
= 20V
6
3
CE
EC
T
, (VOLTS)
, (VOLTS)
4
8
j
= 25° C
12
11
10
9
10
5
R
R
Symbol
R
th(j-c)
th(j-c)
th(c-f)
R
10
G
10
10
10
-1
4
3
2
1
0
2
1
0
Q
D
10
SATURATION VOLTAGE CHARACTERISTICS
0
-1
COLLECTOR-EMITTER VOLTAGE, V
V
V
j
GE
GE
Per 1/6 Module, Thermal Grease Applied*
= 25°C unless otherwise specified
COLLECTOR-CURRENT, I
= 15V
= 0V
T
T
j
j
CAPACITANCE VS. V CE
COLLECTOR-EMITTER
= 25°C
= 125°C
100
10
0
Per FWDi 1/6 Module*
Per IGBT 1/6 Module*
(TYPICAL)
(TYPICAL)
Test Conditions
200
C
10
, (AMPERES)
1
C
C
C
CE
oes
res
ies
, (VOLTS)
300
10
2
4
4
10
10
10
10
10
4
8
6
4
2
0
3
2
1
0
10
SATURATION VOLTAGE CHARACTERISTICS
6
1
T
Min.
2.1
j
—
—
—
= 25°C
GATE-EMITTER VOLTAGE, V
SWITCHING CHARACTERISTICS
COLLECTOR CURRENT, I
8
COLLECTOR-EMITTER
10
0.051
HALF-BRIDGE
Typ.
—
—
—
(TYPICAL)
(TYPICAL)
12
10
t
t
2
d(off)
I
f
I
14
C
C
= 300A
= 150A
t
t
r
C
d(on)
Max.
0.14
0.23
, (AMPERES)
V
V
R
T
Inductive Load
31
—
GE
16
CC
GE
j
I
G
C
= 125°C
, (VOLTS)
= 2.1Ω
= 60A
= 600V
= ±15V
18
°C/W
°C/W
°C/W
Units
10
Ω
20
3
3