MIO1200-33E10 IXYS, MIO1200-33E10 Datasheet
Manufacturer Part Number
MIO1200-33E10
Description
MOD IGBT SGL SWITCH 3300V E10
Specifications of MIO1200-33E10
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
3300V
Vce(on) (max) @ Vge, Ic
3.1V @ 15V, 1200A
Current - Collector (ic) (max)
1200A
Current - Collector Cutoff (max)
120mA
Input Capacitance (cies) @ Vce
187nF @ 25V
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Channel Type
N
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Vces, (v)
3300
Ic25, Tc = 25°c, Igbt, (a)
1650
Ic80, Tc = 80°c, Igbt, (a)
1200
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
3.1
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1950
Rthjc, Max, Igbt, (k/w)
0.0085
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1200
Rthjc, Max, Diode, (k/w)
0.017
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Lead Free Status / RoHS Status
Compliant, Lead free / RoHS Compliant
Available stocks
Part Number:
MIO1200-33E10
Part Number:
MIO1200-33E10
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
t
Symbol
V
V
I
I
t
t
t
t
E
E
C
C
C
Q
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
IGBT
C80
CM
CES
GES
SC
d(on)
r
d(off)
f
CES
GES
CE(sat)
GE(th)
on
off
ies
oes
res
thJC
ge
Collector emitter saturation voltage is given at chip level
Conditions
V
T
t
V
V
Conditions
I
I
V
V
Inductive load; T
V
I
L
V
I
p
C
C
C
C
σ
C
GE
CC
GE
CE
CE
GE
CE
= 1 ms; T
= 1200 A; V
= 240 mA; V
= 1200 A; V
= 1200 A; R
= 100 nH
= 80°C
= 0 V
= 2500 V; V
= 3300 V; V
< 15 V; T
= 0 V; V
= ± 15 V; V
= 25 V; V
C
GE
= 80°C
VJ
GE
CE
GE
G
= ± 20 V; T
CE
CC
< 125°C
CEM CHIP
GE
= 1.5 Ω;
= 0 V; f = 1 MHz
= 1800 V; V
= 15 V; T
VJ
= V
= 1800 V;
= 0 V; T
= 125°C;
GE
= < 3300 V;
T
VJ
VJ
VJ
VJ
= 125°C
= 25°C
GE
= 125°C
= 125°C
(T
C'
G
E'
= ± 15 V
VJ
= 25°C, unless otherwise specified)
E
C
min.
Characteristic Values
6
Maximum Ratings
1070
1890
1950
11.6
12.1
typ.
400
200
440
187
3.1
3.8
2.2
3300
1200
2400
E
C
± 20
10
0.0085 K/W
max.
120 mA
500 nA
8
C
E
mJ
mJ
µC
nF
nF
nF
µs
ns
ns
ns
ns
V
V
A
A
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
good EMC
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ.
MIO 1200-33E10
= 1200 A
= 3300 V
= 3.1 V
20110119a
1 - 6
Related parts for MIO1200-33E10
MIO1200-33E10 Summary of contents
... MHz oes res 1200 1800 thJC Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings 3300 ± 20 1200 2400 = < 3300 V; 10 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
... Resistance terminal to chip term-chip λ R per module; grease = 1 thCH Weight * ) · I resp term-chip C CE(sat) F © 2011 IXYS All rights reserved Maximum Ratings 1200 = 10 ms; half-sinewave 11000 p Characteristic Values min. typ. max. 2.30 2.35 1350 1450 = 125°C VJ 1280 1530 0.017 K/W ...
... V [V] CE Fig. 3 Typical onstate characteristics, chip level 1800 [µC] g Fig. 5 Typical gate charge characteristics © 2011 IXYS All rights reserved Fig. 2 Typical output characteristics, chip level 125 ° Fig. 4 Typical transfer characteristics, chip level V = 2500 1200 ° Fig. 6 Typical capacitances vs ...
... 1.5 1 0.5 IC, Chip IC, Module 0 0 500 1000 1500 2000 V [V] CE Fig. 11 Turn-off safe operating area (RBSOA) © 2011 IXYS All rights reserved off 2000 2500 Fig. 8 Typical switching energies per pulse vs gate resistor V = 1800 1.5 ohm ± 125 °C ...
... F Fig. 13 Typical reverse recovery characteristics vs forward current 0.1 Z Diode th(j-c) 0.01 Z th(j-c) 0.001 0.0001 0.001 0.01 0 [s] Fig. 15 Thermal impedance vs time © 2011 IXYS All rights reserved E rec 1800 1.5 ohm G = ± 125 ° 100 nH σ 2500 3000 Fig. 14 Typical reverse recovery characteristics ...
... Outline drawing Note: all dimensions are shown in mm © 2011 IXYS All rights reserved ' ' MIO 1200-33E10 20110119a ...
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