MIO1500-25E10 IXYS, MIO1500-25E10 Datasheet
MIO1500-25E10
Manufacturer Part Number
MIO1500-25E10
Description
IGBT MODULE SGL 1500A E10
Manufacturer
IXYS
Datasheet
1.MIO1500-25E10.pdf
(3 pages)
Specifications of MIO1500-25E10
Igbt Type
NPT
Configuration
Single Switch
Voltage - Collector Emitter Breakdown (max)
2500V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 1500A
Current - Collector (ic) (max)
1500A
Current - Collector Cutoff (max)
100mA
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
E10
Vces, (v)
2500
Ic25, Tc = 25°c, Igbt, (a)
2100
Ic80, Tc = 80°c, Igbt, (a)
1500
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
2.7
Eoff, Typ, Tj = 125°c, Igbt, (mj)
1450
Rthjc, Max, Igbt, (k/w)
0.008
If25, Tc = 25°c, Diode, (a)
-
If80, Tc = 80°c, Diode, (a)
1500
Rthjc, Max, Diode, (k/w)
0.016
Package Style
E10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Input Capacitance (cies) @ Vce
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MIO1500-25E10
Manufacturer:
VICOR
Quantity:
1 000
Part Number:
MIO1500-25E10
Quantity:
60
IGBT Module
Single switch
Short Circuit SOA Capability
Square RBSOA
Symbol
V
V
I
I
t
Symbol
V
V
I
I
E
E
R
① Collector emitter saturation voltage is given at chip level
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
IGBT
C80
CM
CES
GES
SC
CES
GES
CE(sat)
GE(th)
on
off
thJC
①
Conditions
V
T
t
V
V
Conditions
I
I
V
V
Inductive load; T
V
p
C
C
C
CC
GE
CC
GE
CE
CE
= 1 ms; T
= 1500 A; V
= 240 mA; V
= 80°C
= 1200V; I
= 0 V
= 1700 V; V
= 2500 V; V
< 15 V; T
= 0 V; V
C
GE
C
= 80°C
VJ
GE
= 1500A; R
= ± 20 V; T
CE
VJ
< 125°C
CEM CHIP
GE
= 15 V; T
= 125°C; V
= V
= 0 V; T
GE
= < 2500 V;
T
G
VJ
VJ
VJ
= 1.5Ω; L
VJ
GE
= 125°C
= 125°C
= 25°C
= 125°C
= ± 15 V;
(T
C'
G
E'
Advanced Technical Information
VJ
= 25°C, unless otherwise specified)
σ
= 100nH
E
C
min.
Characteristic Values
Maximum Ratings
6
1400
1450
typ. max.
2500
1500
3000
E
C
± 20
2.7
3.3
10
0.008 K/W
100 mA
500 nA
7.5
C
E
mJ
mJ
µs
V
V
A
A
V
V
V
I
V
V
Features
• NPT³ IGBT
• Industry standard package
Typical Applications
• AC power converters for
• LASER pulse generator
C80
good EMC
- Low-loss
- Smooth switching waveforms for
- High power density
- AISiC base-plate for high power
cycling capacity
- AIN substrate for low thermal resistance
- industrial drives
- windmills
- traction
CES
CE(sat) typ.
MIO 1500-25E10
= 1500 A
= 2500 V
= 2.7 V
1 - 3
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MIO1500-25E10 Summary of contents
Page 1
... Inductive load 125° 1200V 1500A off R thJC ① Collector emitter saturation voltage is given at chip level IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved Advanced Technical Information Maximum Ratings 2500 ± 20 1500 3000 = < ...
Page 2
... Maximum Ratings +150 -40...+125 -40...+125 5000 Characteristic Values min. typ. max. terminal to base 23 terminal to terminal 19 terminal to base 33 terminal to terminal 33 10 0.12 W/m•K 0.006 1500 · I term-chip F MIO 1500-25E10 µC mJ °C °C ° Ω m K/W g © 2004 IXYS All rights reserved ...
Page 3
... Outline drawing Note: all dimensions are shown in mm © 2004 IXYS All rights reserved Advanced Technical Information ' ' MIO 1500-25E10 ...