GA50TS120U Vishay, GA50TS120U Datasheet
GA50TS120U
Specifications of GA50TS120U
VS-GA50TS120U
VSGA50TS120U
VSGA50TS120U
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GA50TS120U Summary of contents
Page 1
... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com PD - 50064A GA50TS120U Ultra-Fast Speed IGBT 1200 CES V = 2.4V CE (on) typ 15V 50A ...
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... GA50TS120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 ° 15V 1 3.0 4.0 Fig Typical Transfer Characteristics GA50TS120U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = ° 125 ° ...
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... GA50TS120U 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature .50 0 .20 0 .10 0 .05 0.1 0.02 0. Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature Notes: 1 ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 100 R = -60 -40 -20 Fig Typical Switching Losses vs. GA50TS120U = 400V = 50A 100 200 300 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 720V 100 100 120 140 160 ° Junction Temperature ( ...
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... GA50TS120U Ohm 125°C = 150 C ° 720V 15V Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125° 25° 1.0 2.0 3 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 140 120 CE 100 SAFE OPERATING AREA 0 100 120 0 V Fig Reverse Bias SOA ...
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... ° 5° / /µs) f Fig Typical Reverse Recovery vs. di www.irf.com ° 5° /dt Fig Typical Recovery Current vs GA50TS120U / /µ ...
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... GA50TS120U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...
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... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 600V Figure 19. Pulsed Collector Current GA50TS120U Test Circuit 600V @25°C C Test Circuit 9 ...
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... GA50TS120U Notes: Repetitive rating 20V, pulse width limited by GE max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50µs; single shot. Case Outline — INT-A-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...