IXFN140N20P IXYS, IXFN140N20P Datasheet - Page 4

• Manufacturer Part Number: IXFN140N20P
• Description: MOSFET N-CH 200V 115A SOT227B
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFN140N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 70A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 115A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 7500pF @ 25V
• Power - Max: 680W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 115 A
• Power Dissipation: 680 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 115
• Rds(on), Max, Tj=25°c, (?): 0.018
• Ciss, Typ, (pf): 7500
• Qg, Typ, (nc): 240
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 680
• Rthjc, Max, (ºc/w): 0.22
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
225
200
175
150
125
100
350
300
250
200
150
100
75
50
25
50
100
0
0
0.4
4
0
T
T
J
J
= 150
4.5
= 150
f = 1M Hz
-40
5
25
0.6
Fig. 7. Input Adm ittance
Fig. 9. Sour ce Cur re nt vs .
Fig. 11. Capacitance
º
º
Source -To-Drain V oltage
º
º
C
C
C
C
5
10
0.8
5.5
V
V
15
G S
S D
V
T
J
DS
- V olts
- V olts
= 25
6
20
- V olts
1
º
C
6.5
25
1.2
7
30
C
C
C
rs s
os s
7.5
iss
1.4
35
8
40
1000
120
110
100
100
90
80
70
60
50
40
30
20
10
10
10
0
9
8
7
6
5
4
3
2
1
0
1
0
0
1
R
T
T
V
I
I
DS (on)
D
G
25
J
C
DS
= 70A
= 10m A
= 175
= 25
Fig. 8. Trans conductance
40
= 100V
50
Lim it
º
Fig. 10. Gate Char ge
º
C
Fig. 12. For w ar d-Bias
C
Safe Ope r ating Ar e a
Q
75
80
10
G
I
100 125 150 175 200 225 250
- nanoCoulombs
T
D
V
J
- A mperes
D S
= -40
150
D C
25
120
IXFN 140N20P
- V olts
º
º
º
C
C
C
100
160
100µs
1m s
25µs
10m s
200
1000
240